Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/91648 |
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| _version_ | 1832549260744196096 |
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| author | E. Bendada K. Raïs P. Mialhe J. P. Charles |
| author_facet | E. Bendada K. Raïs P. Mialhe J. P. Charles |
| author_sort | E. Bendada |
| collection | DOAJ |
| description | Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor
devices has been analyzed and compared with the experimental result. The
activity of interface traps is dependent on the energy level and on the operating
conditions. A model is shown to be powerful to describe the effect of energy level of bulk
recombination centers on the values of reverse recombination current. |
| format | Article |
| id | doaj-art-c1cba72e58b24df7a23a9ed8704114cd |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-c1cba72e58b24df7a23a9ed8704114cd2025-02-03T06:11:49ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-01211617110.1155/1998/91648Surface Recombination Via Interface Defects in Field Effect TransistorsE. Bendada0K. Raïs1P. Mialhe2J. P. Charles3Département de Génie Electrique, Université My lsmaï l-F.S.T., 509 Boutalamine, Errachidia, MoroccoLaboratoire de Caractérisation des Composants à Semiconducteur, Université Chouaïb, El Jadida, MoroccoCentre d’Etudes Fondamentales, Université de Perpignan, Perpignan Cedex 66860, FranceCentre Lorrain d’Optique et Electronique des Solides, Supélec, Metz Cedex 3 57078, FranceRecombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe the effect of energy level of bulk recombination centers on the values of reverse recombination current.http://dx.doi.org/10.1155/1998/91648Recombination currentoxide semiconductorenergy level. |
| spellingShingle | E. Bendada K. Raïs P. Mialhe J. P. Charles Surface Recombination Via Interface Defects in Field Effect Transistors Active and Passive Electronic Components Recombination current oxide semiconductor energy level. |
| title | Surface Recombination Via
Interface Defects in Field Effect Transistors |
| title_full | Surface Recombination Via
Interface Defects in Field Effect Transistors |
| title_fullStr | Surface Recombination Via
Interface Defects in Field Effect Transistors |
| title_full_unstemmed | Surface Recombination Via
Interface Defects in Field Effect Transistors |
| title_short | Surface Recombination Via
Interface Defects in Field Effect Transistors |
| title_sort | surface recombination via interface defects in field effect transistors |
| topic | Recombination current oxide semiconductor energy level. |
| url | http://dx.doi.org/10.1155/1998/91648 |
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