Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/91648 |
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| Summary: | Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor
devices has been analyzed and compared with the experimental result. The
activity of interface traps is dependent on the energy level and on the operating
conditions. A model is shown to be powerful to describe the effect of energy level of bulk
recombination centers on the values of reverse recombination current. |
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| ISSN: | 0882-7516 1563-5031 |