Thin hafnia layer on silicon – Study of interfacial charging and charge transfer by resistometry and photoelectrochemistry

Thin hafnia layer on silicon – Study of interfacial charging and charge transfer by resistometry and photoelectrochemistry

Oxide layers on silicon (Si) can effectively reduce the surface recombination velocity due to chemical and field-effect passivation, thereby increasing efficiency of PV devices. We propose simple experimental technique that provides information on interfacial Si/oxide charge. Here, interfacial charg...

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Bibliographic Details
Main Authors: Aldis Šilėnas, Laurynas Staišiūnas, Putinas Kalinauskas, Konstantinas Leinartas, Asta Grigucevičienė, Andžej Lučun, Skirmantė Tutlienė, Eimutis Juzeliūnas
Format: Article
Language:English
Published: Elsevier 2025-02-01
Series:Electrochemistry Communications
Online Access:http://www.sciencedirect.com/science/article/pii/S1388248125000104
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