Thin hafnia layer on silicon – Study of interfacial charging and charge transfer by resistometry and photoelectrochemistry
Oxide layers on silicon (Si) can effectively reduce the surface recombination velocity due to chemical and field-effect passivation, thereby increasing efficiency of PV devices. We propose simple experimental technique that provides information on interfacial Si/oxide charge. Here, interfacial charg...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
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| Series: | Electrochemistry Communications |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1388248125000104 |
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