Intervalence plasmons in boron-doped diamond
Abstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping o...
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55353-0 |
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| author | Souvik Bhattacharya Jonathan Boyd Sven Reichardt Valentin Allard Amir Hossein Talebi Nicolò Maccaferri Olga Shenderova Aude L. Lereu Ludger Wirtz Giuseppe Strangi R. Mohan Sankaran |
| author_facet | Souvik Bhattacharya Jonathan Boyd Sven Reichardt Valentin Allard Amir Hossein Talebi Nicolò Maccaferri Olga Shenderova Aude L. Lereu Ludger Wirtz Giuseppe Strangi R. Mohan Sankaran |
| author_sort | Souvik Bhattacharya |
| collection | DOAJ |
| description | Abstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies. |
| format | Article |
| id | doaj-art-c0f96185d9de44ec9aa6c158e6917b80 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-c0f96185d9de44ec9aa6c158e6917b802025-01-19T12:30:33ZengNature PortfolioNature Communications2041-17232025-01-011611810.1038/s41467-024-55353-0Intervalence plasmons in boron-doped diamondSouvik Bhattacharya0Jonathan Boyd1Sven Reichardt2Valentin Allard3Amir Hossein Talebi4Nicolò Maccaferri5Olga Shenderova6Aude L. Lereu7Ludger Wirtz8Giuseppe Strangi9R. Mohan Sankaran10Department of Nuclear, Plasma, and Radiological Engineering, The Grainger College of Engineering, University of Illinois Urbana-ChampaignDepartment of Physics, Case Western Reserve UniversityDepartment of Physics and Materials Science, University of LuxembourgAix Marseille Univ, CNRS, Centrale Med, Institut FresnelDepartment of Physics and Materials Science, University of LuxembourgDepartment of Physics, Umeå UniversityAdamas NanotechnologiesAix Marseille Univ, CNRS, Centrale Med, Institut FresnelDepartment of Physics and Materials Science, University of LuxembourgDepartment of Physics, Case Western Reserve UniversityDepartment of Nuclear, Plasma, and Radiological Engineering, The Grainger College of Engineering, University of Illinois Urbana-ChampaignAbstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies.https://doi.org/10.1038/s41467-024-55353-0 |
| spellingShingle | Souvik Bhattacharya Jonathan Boyd Sven Reichardt Valentin Allard Amir Hossein Talebi Nicolò Maccaferri Olga Shenderova Aude L. Lereu Ludger Wirtz Giuseppe Strangi R. Mohan Sankaran Intervalence plasmons in boron-doped diamond Nature Communications |
| title | Intervalence plasmons in boron-doped diamond |
| title_full | Intervalence plasmons in boron-doped diamond |
| title_fullStr | Intervalence plasmons in boron-doped diamond |
| title_full_unstemmed | Intervalence plasmons in boron-doped diamond |
| title_short | Intervalence plasmons in boron-doped diamond |
| title_sort | intervalence plasmons in boron doped diamond |
| url | https://doi.org/10.1038/s41467-024-55353-0 |
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