Laser Enhanced Hydrogen Passivation of Silicon Wafers
The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Impr...
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Format: | Article |
Language: | English |
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Wiley
2015-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2015/193892 |
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author | Lihui Song Alison Wenham Sisi Wang Phillip Hamer Mohammad Shakil Ahmmed Brett Hallam Ly Mai Malcolm Abbott Evatt R. Hawkes CheeMun Chong Stuart Wenham |
author_facet | Lihui Song Alison Wenham Sisi Wang Phillip Hamer Mohammad Shakil Ahmmed Brett Hallam Ly Mai Malcolm Abbott Evatt R. Hawkes CheeMun Chong Stuart Wenham |
author_sort | Lihui Song |
collection | DOAJ |
description | The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL) imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute. |
format | Article |
id | doaj-art-c0f7da7c8e4d43b8a9eb30d98eadf2b0 |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2015-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-c0f7da7c8e4d43b8a9eb30d98eadf2b02025-02-03T01:01:04ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/193892193892Laser Enhanced Hydrogen Passivation of Silicon WafersLihui Song0Alison Wenham1Sisi Wang2Phillip Hamer3Mohammad Shakil Ahmmed4Brett Hallam5Ly Mai6Malcolm Abbott7Evatt R. Hawkes8CheeMun Chong9Stuart Wenham10School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Mechanical and Manufacturing Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, AustraliaThe application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL) imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute.http://dx.doi.org/10.1155/2015/193892 |
spellingShingle | Lihui Song Alison Wenham Sisi Wang Phillip Hamer Mohammad Shakil Ahmmed Brett Hallam Ly Mai Malcolm Abbott Evatt R. Hawkes CheeMun Chong Stuart Wenham Laser Enhanced Hydrogen Passivation of Silicon Wafers International Journal of Photoenergy |
title | Laser Enhanced Hydrogen Passivation of Silicon Wafers |
title_full | Laser Enhanced Hydrogen Passivation of Silicon Wafers |
title_fullStr | Laser Enhanced Hydrogen Passivation of Silicon Wafers |
title_full_unstemmed | Laser Enhanced Hydrogen Passivation of Silicon Wafers |
title_short | Laser Enhanced Hydrogen Passivation of Silicon Wafers |
title_sort | laser enhanced hydrogen passivation of silicon wafers |
url | http://dx.doi.org/10.1155/2015/193892 |
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