Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S<sub>22</sub> and h<sub>21</sub>: An Effective Machine Learning Approach
In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink effects (KEs) in the output reflection coefficient <inline-formula> <tex-math notation="LaTeX">$(S_{2...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10433010/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|