Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S<sub>22</sub> and h<sub>21</sub>: An Effective Machine Learning Approach

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S<sub>22</sub> and h<sub>21</sub>: An Effective Machine Learning Approach

In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink effects (KEs) in the output reflection coefficient <inline-formula> <tex-math notation="LaTeX">$(S_{2...

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Bibliographic Details
Main Authors: Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN HEMT
GRU
kink effect
machine learning methods
semiconductor device modeling
scattering parameter measurements
Online Access:https://ieeexplore.ieee.org/document/10433010/
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Summary:In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink effects (KEs) in the output reflection coefficient <inline-formula> <tex-math notation="LaTeX">$(S_{22})$ </tex-math></inline-formula> and the short-circuit current gain <inline-formula> <tex-math notation="LaTeX">$(h_{21})$ </tex-math></inline-formula> of an advanced microwave transistor. The device under test (DUT) is a 0.25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) substrate, which has a large gate periphery of 1.5 mm. The scattering (S-) parameters of the DUT are measured at a frequency up to 65 GHz and at an ambient temperature up to 200&#x00B0;C. The proposed model can accurately reproduce the KEs in <inline-formula> <tex-math notation="LaTeX">$S_{22}$ </tex-math></inline-formula> and in <inline-formula> <tex-math notation="LaTeX">$h_{21}$ </tex-math></inline-formula>, enabling an effective analysis of their dependence on the operating conditions, bias point and ambient temperature. It is worth noticing that the proposed transistor model shows also good performance in both interpolation and extrapolation test.
ISSN:2168-6734

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