TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD...

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Bibliographic Details
Main Authors: Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
GaN HEMTs
HEMTs
AlGaN/GaN
TCAD simulation
Reliability
HTRB
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000057
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