A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS
Abstract A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. The active feedback baseband enables in‐band signal amplification and out‐of‐band blocker interference suppression by constructing the RF bandpass filter and BB lowpass filter, simultaneou...
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| Format: | Article |
| Language: | English |
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Wiley
2022-10-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/cds2.12124 |
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| _version_ | 1832546694746603520 |
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| author | Benqing Guo Haishi Wang Huifen Wang Lei Li Wanting Zhou Kianoosh Jalali |
| author_facet | Benqing Guo Haishi Wang Huifen Wang Lei Li Wanting Zhou Kianoosh Jalali |
| author_sort | Benqing Guo |
| collection | DOAJ |
| description | Abstract A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. The active feedback baseband enables in‐band signal amplification and out‐of‐band blocker interference suppression by constructing the RF bandpass filter and BB lowpass filter, simultaneously. The voltage‐commutating mixers embedded in current mirrors significantly reduce the power requirement for the LO generator. The stacked n/pMOS structure is commonly adopted to further improve power efficiency. The receiver frontend is designed in a standard 65 nm CMOS process. Simulation results display an NF of 3.4 dB and a maximum gain of 32 dB from 1 to 5 GHz LO frequency range. The obtained in‐band and out‐of‐band IIP3 are −12 dBm and 9 dBm, respectively. The receiver frontend core only consumes 22 mW at 1 GHz LO frequency and occupies the area of 645 × 543 μm2, which is suitable for the low‐power application of handheld terminals. |
| format | Article |
| id | doaj-art-c0de2ad987754b7980ed4a4e7a807a15 |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2022-10-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-c0de2ad987754b7980ed4a4e7a807a152025-02-03T06:47:36ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982022-10-0116754355210.1049/cds2.12124A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOSBenqing Guo0Haishi Wang1Huifen Wang2Lei Li3Wanting Zhou4Kianoosh Jalali5Chengdu University of Information Technology Chengdu ChinaChengdu University of Information Technology Chengdu ChinaHenan University of Technology Zhengzhou ChinaUniversity of Electronic Science and Technology of China Chengdu ChinaUniversity of Electronic Science and Technology of China Chengdu ChinaDepartment of Electrical Engineering University of Razi Kermanshah IranAbstract A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. The active feedback baseband enables in‐band signal amplification and out‐of‐band blocker interference suppression by constructing the RF bandpass filter and BB lowpass filter, simultaneously. The voltage‐commutating mixers embedded in current mirrors significantly reduce the power requirement for the LO generator. The stacked n/pMOS structure is commonly adopted to further improve power efficiency. The receiver frontend is designed in a standard 65 nm CMOS process. Simulation results display an NF of 3.4 dB and a maximum gain of 32 dB from 1 to 5 GHz LO frequency range. The obtained in‐band and out‐of‐band IIP3 are −12 dBm and 9 dBm, respectively. The receiver frontend core only consumes 22 mW at 1 GHz LO frequency and occupies the area of 645 × 543 μm2, which is suitable for the low‐power application of handheld terminals.https://doi.org/10.1049/cds2.12124active baseband feedbacklow powerpassive mixersreceiver frontend |
| spellingShingle | Benqing Guo Haishi Wang Huifen Wang Lei Li Wanting Zhou Kianoosh Jalali A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS IET Circuits, Devices and Systems active baseband feedback low power passive mixers receiver frontend |
| title | A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS |
| title_full | A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS |
| title_fullStr | A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS |
| title_full_unstemmed | A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS |
| title_short | A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS |
| title_sort | 1 5 ghz 22 mw receiver frontend with active feedback baseband and voltage commutating mixers in 65 nm cmos |
| topic | active baseband feedback low power passive mixers receiver frontend |
| url | https://doi.org/10.1049/cds2.12124 |
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