A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller
The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the oxide thickness and an approximate expression for the velocity of charge carriers is derived.
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/59494 |
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| _version_ | 1832562903055597568 |
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| author | M. A. Grado-Caffaro M. Grado-Caffaro |
| author_facet | M. A. Grado-Caffaro M. Grado-Caffaro |
| author_sort | M. A. Grado-Caffaro |
| collection | DOAJ |
| description | The tunneling current density in a MOS cell for a low-voltage microcontroller based on
EEPROM is calculated for high electric strengths. Furthermore, this current density is
discussed in terms of the oxide thickness and an approximate expression for the velocity
of charge carriers is derived. |
| format | Article |
| id | doaj-art-befd30dc1bd6496bb5893052c2884d41 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-befd30dc1bd6496bb5893052c2884d412025-02-03T01:21:31ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-0120316516710.1155/1998/59494A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage MicrocontrollerM. A. Grado-Caffaro0M. Grado-Caffaro1C/Julio. Palacios 11, 9–B, Madrid 28029, SpainC/Julio. Palacios 11, 9–B, Madrid 28029, SpainThe tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the oxide thickness and an approximate expression for the velocity of charge carriers is derived.http://dx.doi.org/10.1155/1998/59494 |
| spellingShingle | M. A. Grado-Caffaro M. Grado-Caffaro A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller Active and Passive Electronic Components |
| title | A Quantitative Analysis of Tunneling Current in A MOS Cell for A
Low-Voltage Microcontroller |
| title_full | A Quantitative Analysis of Tunneling Current in A MOS Cell for A
Low-Voltage Microcontroller |
| title_fullStr | A Quantitative Analysis of Tunneling Current in A MOS Cell for A
Low-Voltage Microcontroller |
| title_full_unstemmed | A Quantitative Analysis of Tunneling Current in A MOS Cell for A
Low-Voltage Microcontroller |
| title_short | A Quantitative Analysis of Tunneling Current in A MOS Cell for A
Low-Voltage Microcontroller |
| title_sort | quantitative analysis of tunneling current in a mos cell for a low voltage microcontroller |
| url | http://dx.doi.org/10.1155/1998/59494 |
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