APA (7th ed.) Citation

Soni, P., Jain, A., Kumar, K., Soni, L. K., Kumar, A., Gupta, N., . . . Saroha, R. Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance. Elsevier.

Chicago Style (17th ed.) Citation

Soni, Pranita, Aditya Jain, Kaushal Kumar, Lokesh Kumar Soni, Ajay Kumar, Neha Gupta, Amit Kumar Goyal, and Rakesh Saroha. Implementation and Comprehensive Investigation of Gate Engineered Si0.1Ge0.9/GaAs Charged Plasma Based JLTFET for Improved Analog/ RF Performance. Elsevier.

MLA (9th ed.) Citation

Soni, Pranita, et al. Implementation and Comprehensive Investigation of Gate Engineered Si0.1Ge0.9/GaAs Charged Plasma Based JLTFET for Improved Analog/ RF Performance. Elsevier.