METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS
The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser...
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2015-04-01
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| Series: | Приборы и методы измерений |
| Online Access: | https://pimi.bntu.by/jour/article/view/167 |
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| author | V. A. Pilipenko A. N. Petlitsky V. A. Gorushko S. V. Shvedov V. V. Ponaryadov |
| author_facet | V. A. Pilipenko A. N. Petlitsky V. A. Gorushko S. V. Shvedov V. V. Ponaryadov |
| author_sort | V. A. Pilipenko |
| collection | DOAJ |
| description | The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile. |
| format | Article |
| id | doaj-art-bee105452f3e4794a1026c694b840e56 |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2015-04-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-bee105452f3e4794a1026c694b840e562025-02-03T05:16:52ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-04-01017176161METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESSV. A. Pilipenko0A. N. Petlitsky1V. A. Gorushko2S. V. Shvedov3V. V. Ponaryadov4«Интеграл», г. Минск«Интеграл», г. Минск«Интеграл», г. Минск«Интеграл», г. МинскБелорусский государственный университетThe method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.https://pimi.bntu.by/jour/article/view/167 |
| spellingShingle | V. A. Pilipenko A. N. Petlitsky V. A. Gorushko S. V. Shvedov V. V. Ponaryadov METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS Приборы и методы измерений |
| title | METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS |
| title_full | METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS |
| title_fullStr | METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS |
| title_full_unstemmed | METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS |
| title_short | METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS |
| title_sort | method and control set up of silicon wafer flatness |
| url | https://pimi.bntu.by/jour/article/view/167 |
| work_keys_str_mv | AT vapilipenko methodandcontrolsetupofsiliconwaferflatness AT anpetlitsky methodandcontrolsetupofsiliconwaferflatness AT vagorushko methodandcontrolsetupofsiliconwaferflatness AT svshvedov methodandcontrolsetupofsiliconwaferflatness AT vvponaryadov methodandcontrolsetupofsiliconwaferflatness |