Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma

Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma

We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the p...

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Bibliographic Details
Main Authors: N. S. Koval’chuk, S. A. Demidovich, L. A. Vlasukova, I. N. Parkhomenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2024-02-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
silicon nitride
vapor deposition
high-density plasma
mechanical stress
refractive index
Online Access:https://doklady.bsuir.by/jour/article/view/3852
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