3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Abstract A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectri...

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Bibliographic Details
Main Authors: Jiajie Yu, Tianyu Wang, Chen Lu, Zhenhai Li, Kangli Xu, Yongkai Liu, Yifan Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
3D stacked memory array
computing‐in‐memory
hafnium‐based ferroelectric memory
high density
high reliability
Online Access:https://doi.org/10.1002/aelm.202400438
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