Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="L...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10496446/ |
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| author | Jialun Li Renqiang Zhu Ka Ming Wong Kei May Lau |
| author_facet | Jialun Li Renqiang Zhu Ka Ming Wong Kei May Lau |
| author_sort | Jialun Li |
| collection | DOAJ |
| description | This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-thick drift layer, leading to a Baliga’s figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications. |
| format | Article |
| id | doaj-art-ba973af1a55f4af3988a3ac38c75d29c |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ba973af1a55f4af3988a3ac38c75d29c2025-01-29T00:00:06ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011231832110.1109/JEDS.2024.338685710496446Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>Jialun Li0https://orcid.org/0000-0002-9709-9240Renqiang Zhu1https://orcid.org/0000-0002-2456-2855Ka Ming Wong2https://orcid.org/0000-0003-3770-1380Kei May Lau3https://orcid.org/0000-0002-7713-1928Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Sai Kung, Hong KongDepartment of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Sai Kung, Hong KongDepartment of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Sai Kung, Hong KongDivision of Emerging Interdisciplinary Area, Hong Kong University of Science and Technology, Sai Kung, Hong KongThis letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-thick drift layer, leading to a Baliga’s figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications.https://ieeexplore.ieee.org/document/10496446/Gallium nitridefully-verticalGaN-on-SiCconductive bufferp-i-n diode |
| spellingShingle | Jialun Li Renqiang Zhu Ka Ming Wong Kei May Lau Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> IEEE Journal of the Electron Devices Society Gallium nitride fully-vertical GaN-on-SiC conductive buffer p-i-n diode |
| title | Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> |
| title_full | Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> |
| title_fullStr | Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> |
| title_full_unstemmed | Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> |
| title_short | Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> |
| title_sort | fully vertical gan on sic p i n diodes with bfom of 2 89 gw cm sup 2 sup |
| topic | Gallium nitride fully-vertical GaN-on-SiC conductive buffer p-i-n diode |
| url | https://ieeexplore.ieee.org/document/10496446/ |
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