Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices
Recently, the fabrication of nonvolatile memory devices based on gold nanoparticles has been intensively investigated. In this work, we report on the design and synthesis of new semiconducting quaterthiophene incorporating hexyl thiol group (4TT). Gold nanoparticles capped with 4TT (4TTG) were prepa...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Journal of Chemistry |
| Online Access: | http://dx.doi.org/10.1155/2016/1247175 |
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| author | Mai Ha Hoang Toan Thanh Dao Nguyen Thi Thu Trang Phuong Hoai Nam Nguyen Trinh Tung Ngo |
| author_facet | Mai Ha Hoang Toan Thanh Dao Nguyen Thi Thu Trang Phuong Hoai Nam Nguyen Trinh Tung Ngo |
| author_sort | Mai Ha Hoang |
| collection | DOAJ |
| description | Recently, the fabrication of nonvolatile memory devices based on gold nanoparticles has been intensively investigated. In this work, we report on the design and synthesis of new semiconducting quaterthiophene incorporating hexyl thiol group (4TT). Gold nanoparticles capped with 4TT (4TTG) were prepared in a two-phase liquid-liquid system. These nanoparticles have diameters in the range 2–6 nm and are well dispersed in the poly(3-hexylthiophene) (P3HT) host matrix. The intermolecular interaction between 4TT and P3HT could enhance the charge-transport between gold nanoparticles and P3HT. Transfer curve of transistor memory device made of 4TTG/P3HT hybrid film exhibited significant current hysteresis, probably arising from the energy level barrier at 4TTG/P3HT interface. Additionally, the polymer memory resistor structure with an active layer consisting of 4TTG and P3HT displayed a remarkable electrical bistable behavior. |
| format | Article |
| id | doaj-art-ba93f68b134b4430a72e84ba7c4ead80 |
| institution | Kabale University |
| issn | 2090-9063 2090-9071 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Chemistry |
| spelling | doaj-art-ba93f68b134b4430a72e84ba7c4ead802025-02-03T06:42:04ZengWileyJournal of Chemistry2090-90632090-90712016-01-01201610.1155/2016/12471751247175Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory DevicesMai Ha Hoang0Toan Thanh Dao1Nguyen Thi Thu Trang2Phuong Hoai Nam Nguyen3Trinh Tung Ngo4Institute of Chemistry, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, VietnamFaculty of Electrical-Electronic Engineering, University of Transport and Communications, No. 3 Cau Giay Street, Dong Da, Hanoi, VietnamInstitute for Tropical Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, VietnamFaculty of Engineering Physics and Nano-Technology, University of Engineering and Technology, Vietnam National University, 144 Xuan Thuy, Cau Giay, Hanoi, VietnamInstitute of Chemistry, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, VietnamRecently, the fabrication of nonvolatile memory devices based on gold nanoparticles has been intensively investigated. In this work, we report on the design and synthesis of new semiconducting quaterthiophene incorporating hexyl thiol group (4TT). Gold nanoparticles capped with 4TT (4TTG) were prepared in a two-phase liquid-liquid system. These nanoparticles have diameters in the range 2–6 nm and are well dispersed in the poly(3-hexylthiophene) (P3HT) host matrix. The intermolecular interaction between 4TT and P3HT could enhance the charge-transport between gold nanoparticles and P3HT. Transfer curve of transistor memory device made of 4TTG/P3HT hybrid film exhibited significant current hysteresis, probably arising from the energy level barrier at 4TTG/P3HT interface. Additionally, the polymer memory resistor structure with an active layer consisting of 4TTG and P3HT displayed a remarkable electrical bistable behavior.http://dx.doi.org/10.1155/2016/1247175 |
| spellingShingle | Mai Ha Hoang Toan Thanh Dao Nguyen Thi Thu Trang Phuong Hoai Nam Nguyen Trinh Tung Ngo Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices Journal of Chemistry |
| title | Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices |
| title_full | Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices |
| title_fullStr | Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices |
| title_full_unstemmed | Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices |
| title_short | Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices |
| title_sort | synthesis of gold nanoparticles capped with quaterthiophene for transistor and resistor memory devices |
| url | http://dx.doi.org/10.1155/2016/1247175 |
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