A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics
A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of...
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| Format: | Article |
| Language: | English |
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Wiley
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/5135637 |
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| author | Eugeny A. Ryndin Amgad A. Al-Saman Boris G. Konoplev |
| author_facet | Eugeny A. Ryndin Amgad A. Al-Saman Boris G. Konoplev |
| author_sort | Eugeny A. Ryndin |
| collection | DOAJ |
| description | A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics. |
| format | Article |
| id | doaj-art-ba700066a52e4c8d83f1999a0e517716 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ba700066a52e4c8d83f1999a0e5177162025-02-03T06:08:37ZengWileyActive and Passive Electronic Components0882-75161563-50312019-01-01201910.1155/2019/51356375135637A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V CharacteristicsEugeny A. Ryndin0Amgad A. Al-Saman1Boris G. Konoplev2Southern Federal University, Institute of Nanotechnology, Electronics and Electronic Equipment Engineering, Department of Electronic Apparatuses Design, 44, Nekrasovskiy St., Taganrog 347928, RussiaSouthern Federal University, Institute of Nanotechnology, Electronics and Electronic Equipment Engineering, Department of Electronic Apparatuses Design, 44, Nekrasovskiy St., Taganrog 347928, RussiaSouthern Federal University, Institute of Nanotechnology, Electronics and Electronic Equipment Engineering, Department of Electronic Apparatuses Design, 44, Nekrasovskiy St., Taganrog 347928, RussiaA quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.http://dx.doi.org/10.1155/2019/5135637 |
| spellingShingle | Eugeny A. Ryndin Amgad A. Al-Saman Boris G. Konoplev A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics Active and Passive Electronic Components |
| title | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics |
| title_full | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics |
| title_fullStr | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics |
| title_full_unstemmed | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics |
| title_short | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics |
| title_sort | quasi two dimensional physics based model of hemts without smoothing functions for joining linear and saturation regions of i v characteristics |
| url | http://dx.doi.org/10.1155/2019/5135637 |
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