Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET
Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel...
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| Format: | Article |
| Language: | English |
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Wiley
2017-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2017/5947819 |
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| author | Satyam Shukla Sandeep Singh Gill Navneet Kaur H. S. Jatana Varun Nehru |
| author_facet | Satyam Shukla Sandeep Singh Gill Navneet Kaur H. S. Jatana Varun Nehru |
| author_sort | Satyam Shukla |
| collection | DOAJ |
| description | Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET. |
| format | Article |
| id | doaj-art-ba309799b5124e1e8b2b6c491b8a154e |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ba309799b5124e1e8b2b6c491b8a154e2025-02-03T01:00:58ZengWileyActive and Passive Electronic Components0882-75161563-50312017-01-01201710.1155/2017/59478195947819Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFETSatyam Shukla0Sandeep Singh Gill1Navneet Kaur2H. S. Jatana3Varun Nehru4Department of Electronic and Communication Engineering, Guru Nanak Dev Engineering College, Ludhiana 141006, IndiaDepartment of Electronic and Communication Engineering, Guru Nanak Dev Engineering College, Ludhiana 141006, IndiaDepartment of Electronic and Communication Engineering, Guru Nanak Dev Engineering College, Ludhiana 141006, IndiaSemi-Conductor Laboratory, Department of Space, Government of India, Mohali 160071, IndiaSemi-Conductor Laboratory, Department of Space, Government of India, Mohali 160071, IndiaTechnology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.http://dx.doi.org/10.1155/2017/5947819 |
| spellingShingle | Satyam Shukla Sandeep Singh Gill Navneet Kaur H. S. Jatana Varun Nehru Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET Active and Passive Electronic Components |
| title | Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET |
| title_full | Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET |
| title_fullStr | Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET |
| title_full_unstemmed | Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET |
| title_short | Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET |
| title_sort | comparative simulation analysis of process parameter variations in 20 nm triangular finfet |
| url | http://dx.doi.org/10.1155/2017/5947819 |
| work_keys_str_mv | AT satyamshukla comparativesimulationanalysisofprocessparametervariationsin20nmtriangularfinfet AT sandeepsinghgill comparativesimulationanalysisofprocessparametervariationsin20nmtriangularfinfet AT navneetkaur comparativesimulationanalysisofprocessparametervariationsin20nmtriangularfinfet AT hsjatana comparativesimulationanalysisofprocessparametervariationsin20nmtriangularfinfet AT varunnehru comparativesimulationanalysisofprocessparametervariationsin20nmtriangularfinfet |