Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli
Understanding and simulating the synaptic plasticity mechanisms of the human brain are crucial for advancing neuromorphic computers for artificial intelligence (AI) and humanoid applications. This study designs, fabricates, and characterizes a dual-gate dielectric synaptic device that utilizes inter...
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Elsevier
2025-03-01
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049825000013 |
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| author | Jieun Kim Jung Wook Lim Chohyeon Park Chaerin Yu Jaehee Lee |
| author_facet | Jieun Kim Jung Wook Lim Chohyeon Park Chaerin Yu Jaehee Lee |
| author_sort | Jieun Kim |
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| description | Understanding and simulating the synaptic plasticity mechanisms of the human brain are crucial for advancing neuromorphic computers for artificial intelligence (AI) and humanoid applications. This study designs, fabricates, and characterizes a dual-gate dielectric synaptic device that utilizes interfacial charge traps to mimic long-term potentiation (LTP) and long-term depression (LTD), which are essential for learning and memory. The device is fabricated using a standard complementary metal-oxide-semiconductor process and is composed of a TiO2 channel deposited over a dual dielectric of SiOx on Al2O3. Biological LTP and LTD occur in the hippocampus and involve complex neurotransmitter interactions, notably through N-methyl-D-aspartate and α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid receptors. In this device, the thickness of the Al2O3 layer determines the synaptic behavior; increasing the Al2O3 thickness increases the voltage across Al2O3 but decreases the voltage across the SiOx layer. Therefore, the electric field distribution determines whether conduction is primarily driven by trapped holes from the charge-storage layer or electrons in the TiO2 channel. Also, by simply varying the applied voltage pulse widths, a single device comprising a thin 10 nm Al2O3 layer can display potentiation or depression with voltage pulses of the same polarity. These results indicate that our device has the potential to function as a synaptic device, effectively replicating brain-like processes and thereby advancing cognitive computing and AI applications. |
| format | Article |
| id | doaj-art-b9de6a54d7ac42c6b174b85477c49036 |
| institution | Kabale University |
| issn | 2590-0498 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
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| series | Materials Today Advances |
| spelling | doaj-art-b9de6a54d7ac42c6b174b85477c490362025-01-31T05:12:18ZengElsevierMaterials Today Advances2590-04982025-03-0125100556Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuliJieun Kim0Jung Wook Lim1Chohyeon Park2Chaerin Yu3Jaehee Lee4Application of Nano Emerging Materials Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of KoreaApplication of Nano Emerging Materials Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea; Department of Semiconductors and Advanced Device Engineering, University of Science and Technology (UST), Daejeon, 34113, Republic of Korea; Corresponding author.Application of Nano Emerging Materials Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea; Department of Semiconductors and Advanced Device Engineering, University of Science and Technology (UST), Daejeon, 34113, Republic of KoreaApplication of Nano Emerging Materials Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea; Department of Semiconductors and Advanced Device Engineering, University of Science and Technology (UST), Daejeon, 34113, Republic of KoreaApplication of Nano Emerging Materials Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea; Department of Semiconductors and Advanced Device Engineering, University of Science and Technology (UST), Daejeon, 34113, Republic of KoreaUnderstanding and simulating the synaptic plasticity mechanisms of the human brain are crucial for advancing neuromorphic computers for artificial intelligence (AI) and humanoid applications. This study designs, fabricates, and characterizes a dual-gate dielectric synaptic device that utilizes interfacial charge traps to mimic long-term potentiation (LTP) and long-term depression (LTD), which are essential for learning and memory. The device is fabricated using a standard complementary metal-oxide-semiconductor process and is composed of a TiO2 channel deposited over a dual dielectric of SiOx on Al2O3. Biological LTP and LTD occur in the hippocampus and involve complex neurotransmitter interactions, notably through N-methyl-D-aspartate and α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid receptors. In this device, the thickness of the Al2O3 layer determines the synaptic behavior; increasing the Al2O3 thickness increases the voltage across Al2O3 but decreases the voltage across the SiOx layer. Therefore, the electric field distribution determines whether conduction is primarily driven by trapped holes from the charge-storage layer or electrons in the TiO2 channel. Also, by simply varying the applied voltage pulse widths, a single device comprising a thin 10 nm Al2O3 layer can display potentiation or depression with voltage pulses of the same polarity. These results indicate that our device has the potential to function as a synaptic device, effectively replicating brain-like processes and thereby advancing cognitive computing and AI applications.http://www.sciencedirect.com/science/article/pii/S2590049825000013Synaptic devicesDual-gate dielectricCharge trap-detrapLong-term potentiationAnd long-term depression |
| spellingShingle | Jieun Kim Jung Wook Lim Chohyeon Park Chaerin Yu Jaehee Lee Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli Materials Today Advances Synaptic devices Dual-gate dielectric Charge trap-detrap Long-term potentiation And long-term depression |
| title | Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli |
| title_full | Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli |
| title_fullStr | Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli |
| title_full_unstemmed | Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli |
| title_short | Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli |
| title_sort | synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single polarity pulsed voltage stimuli |
| topic | Synaptic devices Dual-gate dielectric Charge trap-detrap Long-term potentiation And long-term depression |
| url | http://www.sciencedirect.com/science/article/pii/S2590049825000013 |
| work_keys_str_mv | AT jieunkim synaptictransistorimplementingpotentiationordepressionviafielddistributionmodulationofdualdielectriclayersbysinglepolaritypulsedvoltagestimuli AT jungwooklim synaptictransistorimplementingpotentiationordepressionviafielddistributionmodulationofdualdielectriclayersbysinglepolaritypulsedvoltagestimuli AT chohyeonpark synaptictransistorimplementingpotentiationordepressionviafielddistributionmodulationofdualdielectriclayersbysinglepolaritypulsedvoltagestimuli AT chaerinyu synaptictransistorimplementingpotentiationordepressionviafielddistributionmodulationofdualdielectriclayersbysinglepolaritypulsedvoltagestimuli AT jaeheelee synaptictransistorimplementingpotentiationordepressionviafielddistributionmodulationofdualdielectriclayersbysinglepolaritypulsedvoltagestimuli |