A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors
Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/93964 |
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