Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence
The effect of piezoelectric polarization on GaN-based light emitting diodes (LEDs) with different kinds of prestrain layers between the multiple quantum wells (MQWs) and n-GaN layer is studied and demonstrated. Compared with the conventional LED, more than 10% enhancement in the output power of the...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/135321 |
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| author | C. K. Wang Y. Z. Chiou T. H. Chiang T. K. Lin |
| author_facet | C. K. Wang Y. Z. Chiou T. H. Chiang T. K. Lin |
| author_sort | C. K. Wang |
| collection | DOAJ |
| description | The effect of piezoelectric polarization on GaN-based light emitting diodes (LEDs) with different kinds of prestrain layers between the multiple quantum wells (MQWs) and n-GaN layer is studied and demonstrated. Compared with the conventional LED, more than 10% enhancement in the output power of the LED with prestrain layer can be attributed to the reduction of polarization field within MQWs region. In this study, we reported a simple method to provide useful comparison of polarization fields within active region in GaN-based LEDs by using temperature-dependent electroluminescence (EL) measurement. The results pointed out that the polarization field of conventional LED was stronger than that of the others due to larger variation of the wavelength transition position (i.e., blue-shift change to red-shift) from 300 to 350 K, and thus the larger polarization field must be effectively screened by injecting more carriers into the MQWs region. |
| format | Article |
| id | doaj-art-b8a0ed5a096b4a2db51acdccfcc6a6e7 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-b8a0ed5a096b4a2db51acdccfcc6a6e72025-08-20T02:19:11ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/135321135321Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent ElectroluminescenceC. K. Wang0Y. Z. Chiou1T. H. Chiang2T. K. Lin3Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanEpistar Corporation, Tainan 744, TaiwanEpistar Corporation, Tainan 744, TaiwanThe effect of piezoelectric polarization on GaN-based light emitting diodes (LEDs) with different kinds of prestrain layers between the multiple quantum wells (MQWs) and n-GaN layer is studied and demonstrated. Compared with the conventional LED, more than 10% enhancement in the output power of the LED with prestrain layer can be attributed to the reduction of polarization field within MQWs region. In this study, we reported a simple method to provide useful comparison of polarization fields within active region in GaN-based LEDs by using temperature-dependent electroluminescence (EL) measurement. The results pointed out that the polarization field of conventional LED was stronger than that of the others due to larger variation of the wavelength transition position (i.e., blue-shift change to red-shift) from 300 to 350 K, and thus the larger polarization field must be effectively screened by injecting more carriers into the MQWs region.http://dx.doi.org/10.1155/2015/135321 |
| spellingShingle | C. K. Wang Y. Z. Chiou T. H. Chiang T. K. Lin Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence International Journal of Photoenergy |
| title | Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence |
| title_full | Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence |
| title_fullStr | Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence |
| title_full_unstemmed | Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence |
| title_short | Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence |
| title_sort | investigating the effect of piezoelectric polarization on gan based leds with different prestrain layer by temperature dependent electroluminescence |
| url | http://dx.doi.org/10.1155/2015/135321 |
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