Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source
Inherent noise characteristics of memristor devices can be utilized in stochastic computing applications such as true random number generators (TRNGs). However, the ratio between capture and emission time can significantly affect the randomness of generated bit streams by TRNGs. Herein, a bias‐indep...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-06-01
|
| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202400648 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850218797094404096 |
|---|---|
| author | Jinwoo Park Hyunjoong Kim Hyungjin Kim |
| author_facet | Jinwoo Park Hyunjoong Kim Hyungjin Kim |
| author_sort | Jinwoo Park |
| collection | DOAJ |
| description | Inherent noise characteristics of memristor devices can be utilized in stochastic computing applications such as true random number generators (TRNGs). However, the ratio between capture and emission time can significantly affect the randomness of generated bit streams by TRNGs. Herein, a bias‐independent TRNG circuit is presented, utilizing the random telegraph noise (RTN) signal of the memristor as a random entropy source. This design considers the condition‐dependent RTN characteristics, including capture time and emission time constants, which vary with read voltage (Vread) and temperature conditions in the high‐resistance state of the fabricated memristor. The TRNG circuit, comprising an edge detection circuit and an N‐bit counter, is experimentally demonstrated to validate hardware feasibility with the optimized external clock frequency, which can mitigate the biases induced by Vread and temperature. Finally, the performance of the designed TRNG circuit is evaluated using autocorrelation functions and National Institute of Standards and Technology tests, confirming its capability to produce random number bitstreams. |
| format | Article |
| id | doaj-art-b840a0677c044c739378e28b1d3b51f2 |
| institution | OA Journals |
| issn | 2640-4567 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj-art-b840a0677c044c739378e28b1d3b51f22025-08-20T02:07:35ZengWileyAdvanced Intelligent Systems2640-45672025-06-0176n/an/a10.1002/aisy.202400648Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy SourceJinwoo Park0Hyunjoong Kim1Hyungjin Kim2Division of Materials Science and Engineering and Department of Semiconductor Engineering Hanyang University Seoul 04763 KoreaDivision of Materials Science and Engineering and Department of Semiconductor Engineering Hanyang University Seoul 04763 KoreaDivision of Materials Science and Engineering and Department of Semiconductor Engineering Hanyang University Seoul 04763 KoreaInherent noise characteristics of memristor devices can be utilized in stochastic computing applications such as true random number generators (TRNGs). However, the ratio between capture and emission time can significantly affect the randomness of generated bit streams by TRNGs. Herein, a bias‐independent TRNG circuit is presented, utilizing the random telegraph noise (RTN) signal of the memristor as a random entropy source. This design considers the condition‐dependent RTN characteristics, including capture time and emission time constants, which vary with read voltage (Vread) and temperature conditions in the high‐resistance state of the fabricated memristor. The TRNG circuit, comprising an edge detection circuit and an N‐bit counter, is experimentally demonstrated to validate hardware feasibility with the optimized external clock frequency, which can mitigate the biases induced by Vread and temperature. Finally, the performance of the designed TRNG circuit is evaluated using autocorrelation functions and National Institute of Standards and Technology tests, confirming its capability to produce random number bitstreams.https://doi.org/10.1002/aisy.202400648bias independentcapture and emission timesmemristorsrandom telegraph noisetrue random number generators |
| spellingShingle | Jinwoo Park Hyunjoong Kim Hyungjin Kim Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source Advanced Intelligent Systems bias independent capture and emission times memristors random telegraph noise true random number generators |
| title | Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source |
| title_full | Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source |
| title_fullStr | Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source |
| title_full_unstemmed | Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source |
| title_short | Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source |
| title_sort | bias independent true random number generator circuit using memristor noise signals as entropy source |
| topic | bias independent capture and emission times memristors random telegraph noise true random number generators |
| url | https://doi.org/10.1002/aisy.202400648 |
| work_keys_str_mv | AT jinwoopark biasindependenttruerandomnumbergeneratorcircuitusingmemristornoisesignalsasentropysource AT hyunjoongkim biasindependenttruerandomnumbergeneratorcircuitusingmemristornoisesignalsasentropysource AT hyungjinkim biasindependenttruerandomnumbergeneratorcircuitusingmemristornoisesignalsasentropysource |