A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function

We propose a new two dimensional (2D) analytical solution of Threshold Voltage for undoped (or lightly doped) Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is...

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Bibliographic Details
Main Authors: Anoop Garg, S.N. Sinha, R.P. Agarwal
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0894-0902.pdf
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