Experimental Optimization of Annular Polishing Parameters for Silicon Carbide
Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for m...
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Format: | Article |
Language: | English |
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Wiley
2018-01-01
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Series: | Advances in Materials Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2018/9019848 |
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author | Yuan Liu La Han Haiying Liu Yikai Shi Junjie Zhang |
author_facet | Yuan Liu La Han Haiying Liu Yikai Shi Junjie Zhang |
author_sort | Yuan Liu |
collection | DOAJ |
description | Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide. |
format | Article |
id | doaj-art-b711938df433492f9aa9c96771994ea8 |
institution | Kabale University |
issn | 1687-8434 1687-8442 |
language | English |
publishDate | 2018-01-01 |
publisher | Wiley |
record_format | Article |
series | Advances in Materials Science and Engineering |
spelling | doaj-art-b711938df433492f9aa9c96771994ea82025-02-03T05:46:52ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/90198489019848Experimental Optimization of Annular Polishing Parameters for Silicon CarbideYuan Liu0La Han1Haiying Liu2Yikai Shi3Junjie Zhang4School of Astronautics, Harbin Institute of Technology, Harbin 150001, ChinaCenter for Precision Engineering, Harbin Institute of Technology, Harbin 150001, ChinaXiaguang Optical Electron Co., Ltd, Yangzhou 225127, ChinaScience and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha 410073, ChinaCenter for Precision Engineering, Harbin Institute of Technology, Harbin 150001, ChinaMachined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.http://dx.doi.org/10.1155/2018/9019848 |
spellingShingle | Yuan Liu La Han Haiying Liu Yikai Shi Junjie Zhang Experimental Optimization of Annular Polishing Parameters for Silicon Carbide Advances in Materials Science and Engineering |
title | Experimental Optimization of Annular Polishing Parameters for Silicon Carbide |
title_full | Experimental Optimization of Annular Polishing Parameters for Silicon Carbide |
title_fullStr | Experimental Optimization of Annular Polishing Parameters for Silicon Carbide |
title_full_unstemmed | Experimental Optimization of Annular Polishing Parameters for Silicon Carbide |
title_short | Experimental Optimization of Annular Polishing Parameters for Silicon Carbide |
title_sort | experimental optimization of annular polishing parameters for silicon carbide |
url | http://dx.doi.org/10.1155/2018/9019848 |
work_keys_str_mv | AT yuanliu experimentaloptimizationofannularpolishingparametersforsiliconcarbide AT lahan experimentaloptimizationofannularpolishingparametersforsiliconcarbide AT haiyingliu experimentaloptimizationofannularpolishingparametersforsiliconcarbide AT yikaishi experimentaloptimizationofannularpolishingparametersforsiliconcarbide AT junjiezhang experimentaloptimizationofannularpolishingparametersforsiliconcarbide |