Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes
A synthetic NiIIL(H2O)2 complex (L = xylenol orange, 3,3′-bis [N,N-di(carboxymethyl)-aminomethyl]-o-cresol sulphonapthalein (H2O)2), which is a water-soluble dye, has been studied for its photosensitizing properties at n-ZnO semiconductor electrodes prepared by sol-gel techniques. The absorption sp...
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Wiley
2011-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2011/980560 |
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| author | Suman Kushwaha Lal Bahadur |
| author_facet | Suman Kushwaha Lal Bahadur |
| author_sort | Suman Kushwaha |
| collection | DOAJ |
| description | A synthetic NiIIL(H2O)2 complex (L = xylenol orange, 3,3′-bis [N,N-di(carboxymethyl)-aminomethyl]-o-cresol sulphonapthalein (H2O)2), which is a water-soluble dye, has been studied for its photosensitizing properties at n-ZnO semiconductor electrodes prepared by sol-gel techniques. The absorption spectrum of aqueous solution of this complex exhibits a strong peak at 563 nm and a shoulder at 526 nm wavelength of light. The sandwich-type dye-sensitized solar cell using ZnO semiconducting thin film with test dye anchored onto it showed the cell output as follows: VOC=0.506 V, Jsc=1.68 mA cm−2, and FF=0.41 under illumination with full spectrum of light (intensity 520 mW cm−2), while on illumination with visible light (λ>420 nm, intensity 480 mW cm−2), VOC=0.506 V, Jsc=1.4 mA cm−2, and FF=0.49 were achieved. Maximum incident photon-to-current conversion efficiency for the present system was found to be 8.7% at wavelength (λmax=563 nm). |
| format | Article |
| id | doaj-art-b6edac7a72d64ec6bfc1ca9173f2bb5d |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
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| series | International Journal of Photoenergy |
| spelling | doaj-art-b6edac7a72d64ec6bfc1ca9173f2bb5d2025-02-03T07:24:37ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2011-01-01201110.1155/2011/980560980560Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor ElectrodesSuman Kushwaha0Lal Bahadur1Department of Chemistry, Faculty of Science, Banaras Hindu University, Varanasi 221005, IndiaDepartment of Chemistry, Faculty of Science, Banaras Hindu University, Varanasi 221005, IndiaA synthetic NiIIL(H2O)2 complex (L = xylenol orange, 3,3′-bis [N,N-di(carboxymethyl)-aminomethyl]-o-cresol sulphonapthalein (H2O)2), which is a water-soluble dye, has been studied for its photosensitizing properties at n-ZnO semiconductor electrodes prepared by sol-gel techniques. The absorption spectrum of aqueous solution of this complex exhibits a strong peak at 563 nm and a shoulder at 526 nm wavelength of light. The sandwich-type dye-sensitized solar cell using ZnO semiconducting thin film with test dye anchored onto it showed the cell output as follows: VOC=0.506 V, Jsc=1.68 mA cm−2, and FF=0.41 under illumination with full spectrum of light (intensity 520 mW cm−2), while on illumination with visible light (λ>420 nm, intensity 480 mW cm−2), VOC=0.506 V, Jsc=1.4 mA cm−2, and FF=0.49 were achieved. Maximum incident photon-to-current conversion efficiency for the present system was found to be 8.7% at wavelength (λmax=563 nm).http://dx.doi.org/10.1155/2011/980560 |
| spellingShingle | Suman Kushwaha Lal Bahadur Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes International Journal of Photoenergy |
| title | Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes |
| title_full | Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes |
| title_fullStr | Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes |
| title_full_unstemmed | Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes |
| title_short | Characterization of Synthetic Ni(II)-Xylenol Complex as a Photosensitizer for Wide-Band Gap ZnO Semiconductor Electrodes |
| title_sort | characterization of synthetic ni ii xylenol complex as a photosensitizer for wide band gap zno semiconductor electrodes |
| url | http://dx.doi.org/10.1155/2011/980560 |
| work_keys_str_mv | AT sumankushwaha characterizationofsyntheticniiixylenolcomplexasaphotosensitizerforwidebandgapznosemiconductorelectrodes AT lalbahadur characterizationofsyntheticniiixylenolcomplexasaphotosensitizerforwidebandgapznosemiconductorelectrodes |