Passive On-Chip Components for Fully Integrated Silicon RF VCOs
In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial H...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510211281 |
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| _version_ | 1832554657103216640 |
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| author | Aristides Kyranas Yannis Papananos |
| author_facet | Aristides Kyranas Yannis Papananos |
| author_sort | Aristides Kyranas |
| collection | DOAJ |
| description | In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations.
Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their
respective losses RSL
and
RSC
. |
| format | Article |
| id | doaj-art-b6b58c3e7b6a46ce962f40703d670754 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-b6b58c3e7b6a46ce962f40703d6707542025-02-03T05:51:00ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-01251839510.1080/08827510211281Passive On-Chip Components for Fully Integrated Silicon RF VCOsAristides Kyranas0Yannis Papananos1Microelectronic Circuit Design Group, National Technical University of Athens, GreeceMicroelectronic Circuit Design Group, National Technical University of Athens, GreeceIn this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their respective losses RSL and RSC .http://dx.doi.org/10.1080/08827510211281 |
| spellingShingle | Aristides Kyranas Yannis Papananos Passive On-Chip Components for Fully Integrated Silicon RF VCOs Active and Passive Electronic Components |
| title | Passive On-Chip Components for Fully Integrated Silicon RF VCOs |
| title_full | Passive On-Chip Components for Fully Integrated Silicon RF VCOs |
| title_fullStr | Passive On-Chip Components for Fully Integrated Silicon RF VCOs |
| title_full_unstemmed | Passive On-Chip Components for Fully Integrated Silicon RF VCOs |
| title_short | Passive On-Chip Components for Fully Integrated Silicon RF VCOs |
| title_sort | passive on chip components for fully integrated silicon rf vcos |
| url | http://dx.doi.org/10.1080/08827510211281 |
| work_keys_str_mv | AT aristideskyranas passiveonchipcomponentsforfullyintegratedsiliconrfvcos AT yannispapananos passiveonchipcomponentsforfullyintegratedsiliconrfvcos |