Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/65128 |
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| Summary: | In this paper, a detailed experimental study of channel length, drain voltage and
temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel
length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L decrease from 2 to 0.1 μm, this
behaviour found expression in a fast increase of the substrate current maximum
Isubmax. Moreover it is observed that contrarily of long channels, low temperature
operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and
may represent a promising alternative for the improvement of the performances of Si
integrated circuits. |
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| ISSN: | 0882-7516 1563-5031 |