E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained
Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. The E-k relation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving proc...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/686303 |
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| author | Zhang Chao Xu Da-Qing Liu Shu-Lin Liu Ning-Zhuang |
| author_facet | Zhang Chao Xu Da-Qing Liu Shu-Lin Liu Ning-Zhuang |
| author_sort | Zhang Chao |
| collection | DOAJ |
| description | Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. The E-k relation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, the E-k relation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design. |
| format | Article |
| id | doaj-art-b436ed33d8b649fe9ce0b35e5640f679 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-b436ed33d8b649fe9ce0b35e5640f6792025-02-03T01:00:54ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242014-01-01201410.1155/2014/686303686303E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially StrainedZhang Chao0Xu Da-Qing1Liu Shu-Lin2Liu Ning-Zhuang3School of Electrical and Control Engineering, Xi'an University of Science and Technology, Xi'an 710054, ChinaSchool of Electrical and Control Engineering, Xi'an University of Science and Technology, Xi'an 710054, ChinaSchool of Electrical and Control Engineering, Xi'an University of Science and Technology, Xi'an 710054, ChinaSchool of Electrical and Control Engineering, Xi'an University of Science and Technology, Xi'an 710054, ChinaUniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. The E-k relation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, the E-k relation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.http://dx.doi.org/10.1155/2014/686303 |
| spellingShingle | Zhang Chao Xu Da-Qing Liu Shu-Lin Liu Ning-Zhuang E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained Advances in Condensed Matter Physics |
| title | E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained |
| title_full | E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained |
| title_fullStr | E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained |
| title_full_unstemmed | E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained |
| title_short | E-k Relation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained |
| title_sort | e k relation of valence band in arbitrary orientation typical plane uniaxially strained |
| url | http://dx.doi.org/10.1155/2014/686303 |
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