Significant influence of low SOC materials on magnetization dynamics and spin-orbital to charge conversion
Abstract The integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has recently been proven to be noteworthy. Here we demonstrate the direct efficient spin-orbital pumping into the low SOC CuO x and C60 layers from amorphous CoFeB. Further, the C60 capp...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | npj Spintronics |
| Online Access: | https://doi.org/10.1038/s44306-025-00080-5 |
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| Summary: | Abstract The integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has recently been proven to be noteworthy. Here we demonstrate the direct efficient spin-orbital pumping into the low SOC CuO x and C60 layers from amorphous CoFeB. Further, the C60 capping layer (CL) significantly enhances the magnetization relaxation process compared to the CuO x in β-W/CoFeB/CL heterostructures, while the static magnetic properties remain indifferent irrespective of the nature of CL. Interestingly, the spin-orbital to charge conversion phenomenon is found to be enhanced by 67% for β-W/CoFeB/CuO x stacking compared to β-W/CoFeB/C60 heterostructure, signifying the anti-correlation between the magnetic damping and spin-orbital to charge conversion. The results are interpreted by interfacial phenomena, like the orbital Rashba effect, two-magnon scattering, and interfacial spin memory loss. Our detailed experimental investigations shed light on the importance of low SOC materials in effectively tuning the magnetization dynamics for the development of future power-efficient spintronics devices. |
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| ISSN: | 2948-2119 |