Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening
Abstract Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performa...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-01-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-024-01727-4 |
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| author | Yiting Liu Yingying Sun Xiaohan Yan Bo Li Lei Wang Jianshun Li Jiahui Sun Yaqi Guo Weipeng Liu Binbin Hu Qingli Lin Fengjia Fan Huaibin Shen |
| author_facet | Yiting Liu Yingying Sun Xiaohan Yan Bo Li Lei Wang Jianshun Li Jiahui Sun Yaqi Guo Weipeng Liu Binbin Hu Qingli Lin Fengjia Fan Huaibin Shen |
| author_sort | Yiting Liu |
| collection | DOAJ |
| description | Abstract Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce “giant” fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting, shallow valence band maximum, and improved quasi-Fermi level splitting, which effectively flatten the energy landscape between the QD layer and hole transport layer. The higher electron concentration and accelerated hole injection significantly promote the carrier radiative recombination dynamics. Consequently, CdZnSe-based device exhibits a high power conversion efficiency (PCE) of 27.3% and an ultra-low efficiency roll-off, with a high external quantum efficiency (EQE) exceeding 25% over a wide range of low driving voltages (1.8-3.0 V) and low heat generation. The record-high luminance levels of 1,400 and 8,600 cd m-2 are achieved at bandgap voltages of 100% and 120%, respectively. Meanwhile, These LEDs show an unprecedented operation lifetime T95 (time for the luminance to decrease to 95%) of 72,968 h at 1,000 cd m-2. Our work points to a novel path to flatten energy landscape at the QD-related interface for solution-processed photoelectronic devices. |
| format | Article |
| id | doaj-art-b219e254c5804b2b99d7f93c4825f928 |
| institution | Kabale University |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-b219e254c5804b2b99d7f93c4825f9282025-01-19T12:39:17ZengNature Publishing GroupLight: Science & Applications2047-75382025-01-011411810.1038/s41377-024-01727-4Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flatteningYiting Liu0Yingying Sun1Xiaohan Yan2Bo Li3Lei Wang4Jianshun Li5Jiahui Sun6Yaqi Guo7Weipeng Liu8Binbin Hu9Qingli Lin10Fengjia Fan11Huaibin Shen12Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of ChinaHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of ChinaKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of ChinaKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityAbstract Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce “giant” fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting, shallow valence band maximum, and improved quasi-Fermi level splitting, which effectively flatten the energy landscape between the QD layer and hole transport layer. The higher electron concentration and accelerated hole injection significantly promote the carrier radiative recombination dynamics. Consequently, CdZnSe-based device exhibits a high power conversion efficiency (PCE) of 27.3% and an ultra-low efficiency roll-off, with a high external quantum efficiency (EQE) exceeding 25% over a wide range of low driving voltages (1.8-3.0 V) and low heat generation. The record-high luminance levels of 1,400 and 8,600 cd m-2 are achieved at bandgap voltages of 100% and 120%, respectively. Meanwhile, These LEDs show an unprecedented operation lifetime T95 (time for the luminance to decrease to 95%) of 72,968 h at 1,000 cd m-2. Our work points to a novel path to flatten energy landscape at the QD-related interface for solution-processed photoelectronic devices.https://doi.org/10.1038/s41377-024-01727-4 |
| spellingShingle | Yiting Liu Yingying Sun Xiaohan Yan Bo Li Lei Wang Jianshun Li Jiahui Sun Yaqi Guo Weipeng Liu Binbin Hu Qingli Lin Fengjia Fan Huaibin Shen Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening Light: Science & Applications |
| title | Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening |
| title_full | Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening |
| title_fullStr | Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening |
| title_full_unstemmed | Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening |
| title_short | Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening |
| title_sort | realizing low voltage driven bright and stable quantum dot light emitting diodes through energy landscape flattening |
| url | https://doi.org/10.1038/s41377-024-01727-4 |
| work_keys_str_mv | AT yitingliu realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT yingyingsun realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT xiaohanyan realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT boli realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT leiwang realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT jianshunli realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT jiahuisun realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT yaqiguo realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT weipengliu realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT binbinhu realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT qinglilin realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT fengjiafan realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening AT huaibinshen realizinglowvoltagedrivenbrightandstablequantumdotlightemittingdiodesthroughenergylandscapeflattening |