Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance
Both p-n and n-p heterojunctions of ZnO-MoS2 have been fabricated in order to understand the performance of electron and hole transport properties in solar cells and a self-powered photodetector system. Atomically thin 2-dimensional (2D) MoS2 was prepared by using a spin coating method with controll...
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| Format: | Article |
| Language: | English |
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Wiley
2021-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2021/1884293 |
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| author | Ali Aldalbahi Zhen-Bo Wang Tansir Ahamad Saad M. Alshehri Peter X. Feng |
| author_facet | Ali Aldalbahi Zhen-Bo Wang Tansir Ahamad Saad M. Alshehri Peter X. Feng |
| author_sort | Ali Aldalbahi |
| collection | DOAJ |
| description | Both p-n and n-p heterojunctions of ZnO-MoS2 have been fabricated in order to understand the performance of electron and hole transport properties in solar cells and a self-powered photodetector system. Atomically thin 2-dimensional (2D) MoS2 was prepared by using a spin coating method with controlled process times, whereas ZnO nanowires were prepared by using a plasma sputtering deposition technique. The nanoscale morphologies, composites, and photoelectric properties of nanocomposites were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman scattering spectroscopy, respectively. 2D heteronanostructures have exhibited an enhanced performance as compared to single-material-based prototypes. In photovoltaic mode, n-p heterojunction of the ZnO-MoS2-based prototype appears to have much better photoelectric conversion efficiency than that in the case with p-n junction, indicating highly effective hole transport properties of 2D MoS2 materials. Both band broadening and band shift were observed. Furthermore, the bias, annealing, and synergistic effects on the generated photocurrents and the response times were evaluated. The newly designed prototype exhibits exceptional properties: a broadband spectral response, a high signal-to-noise ratio, and excellent stability. |
| format | Article |
| id | doaj-art-b15f68ad9cfa4ab08175f37f712470a7 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-b15f68ad9cfa4ab08175f37f712470a72025-02-03T01:25:47ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2021-01-01202110.1155/2021/18842931884293Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric PerformanceAli Aldalbahi0Zhen-Bo Wang1Tansir Ahamad2Saad M. Alshehri3Peter X. Feng4Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi ArabiaMIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, State Key Lab of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, ChinaDepartment of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi ArabiaDepartment of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi ArabiaDepartment of Physics, University of Puerto Rico, San Juan, PR 00936-8377, USABoth p-n and n-p heterojunctions of ZnO-MoS2 have been fabricated in order to understand the performance of electron and hole transport properties in solar cells and a self-powered photodetector system. Atomically thin 2-dimensional (2D) MoS2 was prepared by using a spin coating method with controlled process times, whereas ZnO nanowires were prepared by using a plasma sputtering deposition technique. The nanoscale morphologies, composites, and photoelectric properties of nanocomposites were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman scattering spectroscopy, respectively. 2D heteronanostructures have exhibited an enhanced performance as compared to single-material-based prototypes. In photovoltaic mode, n-p heterojunction of the ZnO-MoS2-based prototype appears to have much better photoelectric conversion efficiency than that in the case with p-n junction, indicating highly effective hole transport properties of 2D MoS2 materials. Both band broadening and band shift were observed. Furthermore, the bias, annealing, and synergistic effects on the generated photocurrents and the response times were evaluated. The newly designed prototype exhibits exceptional properties: a broadband spectral response, a high signal-to-noise ratio, and excellent stability.http://dx.doi.org/10.1155/2021/1884293 |
| spellingShingle | Ali Aldalbahi Zhen-Bo Wang Tansir Ahamad Saad M. Alshehri Peter X. Feng Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance International Journal of Photoenergy |
| title | Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance |
| title_full | Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance |
| title_fullStr | Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance |
| title_full_unstemmed | Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance |
| title_short | Two-Step Facile Preparation of 2D MoS2/ZnO Nanocomposite p-n Junctions with Enhanced Photoelectric Performance |
| title_sort | two step facile preparation of 2d mos2 zno nanocomposite p n junctions with enhanced photoelectric performance |
| url | http://dx.doi.org/10.1155/2021/1884293 |
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