A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader
The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite 𝑔ds (=1/𝑟0) effect has been considered to improve the nanometric design,...
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2010/702759 |
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| author | Jie Li S. M. Rezaul Hasan |
| author_facet | Jie Li S. M. Rezaul Hasan |
| author_sort | Jie Li |
| collection | DOAJ |
| description | The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite 𝑔ds (=1/𝑟0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum 𝐹min noise matching at a very low power drain of 850 𝜇W from a 0.7 V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain (𝑆21) of ≈12dB, a reverse isolation (𝑆12) of ≈−34dB, an output power reflection (𝑆22 @866 MHz) of ≈−25dB, and an input power reflection (𝑆11 @866 MHz) of ≈−12dB. It had a minimum pass-band 𝑁𝐹 of around 2.2 dB and a third-order input referred intercept point (IIP3) of ≈−11.5dBm. |
| format | Article |
| id | doaj-art-b133f3fb42d0430b8908ebbdc0aa78d7 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-b133f3fb42d0430b8908ebbdc0aa78d72025-02-03T01:12:05ZengWileyActive and Passive Electronic Components0882-75161563-50312010-01-01201010.1155/2010/702759702759A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID ReaderJie Li0S. M. Rezaul Hasan1Center for Research in Analog & VLSI Microsystem Design (CRAVE), School of Engineering and Advanced Technology (SEAT), Massey University, Albany, Auckland 0632, New ZealandCenter for Research in Analog & VLSI Microsystem Design (CRAVE), School of Engineering and Advanced Technology (SEAT), Massey University, Albany, Auckland 0632, New ZealandThe design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite 𝑔ds (=1/𝑟0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum 𝐹min noise matching at a very low power drain of 850 𝜇W from a 0.7 V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain (𝑆21) of ≈12dB, a reverse isolation (𝑆12) of ≈−34dB, an output power reflection (𝑆22 @866 MHz) of ≈−25dB, and an input power reflection (𝑆11 @866 MHz) of ≈−12dB. It had a minimum pass-band 𝑁𝐹 of around 2.2 dB and a third-order input referred intercept point (IIP3) of ≈−11.5dBm.http://dx.doi.org/10.1155/2010/702759 |
| spellingShingle | Jie Li S. M. Rezaul Hasan A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader Active and Passive Electronic Components |
| title | A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader |
| title_full | A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader |
| title_fullStr | A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader |
| title_full_unstemmed | A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader |
| title_short | A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader |
| title_sort | 12 db 0 7 v 𝟖𝟓𝟎𝝁w cmos lna for 866 mhz uhf rfid reader |
| url | http://dx.doi.org/10.1155/2010/702759 |
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