Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus

Mid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling syst...

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Main Authors: Wang Ziqian, Wang Huide, Wang Chen, Bao Yushuo, Zheng Weiying, Weng Xiaoliang, Zhu Yihan, Liu Yi, Zhang Yule, Tian Xilin, Sun Shuo, Cao Rui, Shi Zhe, Chen Xing, Qiu Meng, Wang Hao, Liu Jun, Chen Shuqing, Zeng Yu-Jia, Liao Wugang, Huang Zhangcheng, Li Haiou, Gao Lingfeng, Li Jianqing, Fan Dianyuan, Zhang Han
Format: Article
Language:English
Published: De Gruyter 2025-02-01
Series:Nanophotonics
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Online Access:https://doi.org/10.1515/nanoph-2024-0613
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author Wang Ziqian
Wang Huide
Wang Chen
Bao Yushuo
Zheng Weiying
Weng Xiaoliang
Zhu Yihan
Liu Yi
Zhang Yule
Tian Xilin
Sun Shuo
Cao Rui
Shi Zhe
Chen Xing
Qiu Meng
Wang Hao
Liu Jun
Chen Shuqing
Zeng Yu-Jia
Liao Wugang
Huang Zhangcheng
Li Haiou
Gao Lingfeng
Li Jianqing
Fan Dianyuan
Zhang Han
author_facet Wang Ziqian
Wang Huide
Wang Chen
Bao Yushuo
Zheng Weiying
Weng Xiaoliang
Zhu Yihan
Liu Yi
Zhang Yule
Tian Xilin
Sun Shuo
Cao Rui
Shi Zhe
Chen Xing
Qiu Meng
Wang Hao
Liu Jun
Chen Shuqing
Zeng Yu-Jia
Liao Wugang
Huang Zhangcheng
Li Haiou
Gao Lingfeng
Li Jianqing
Fan Dianyuan
Zhang Han
author_sort Wang Ziqian
collection DOAJ
description Mid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single-pixel imaging primarily depends on the performance of the photodetector and the sampling system. Photodetectors based on black phosphorus (BP) exhibit low dark current, high specific detectivity (D *), and room-temperature operability. Artificial intelligence (AI)-assisted sampling systems feature efficient and intelligent data reconstruction capabilities. In this work, we demonstrate an AI-driven black phosphorus (BP)/molybdenum disulfide (MoS2)/hexagonal boron nitride (hBN) heterojunction for Mid-IR photodetection and imaging. By optimizing the thickness of the heterojunction, the quality of the interface, and the AI algorithm, we achieved high-performance Mid-IR photodetection and imaging. Specifically, the photodetector has a responsivity of 0.25 A/W at a wavelength of 3,390 nm, an extremely high D * of 3.7 × 109 Jones, a response speed as low as 7 ms, and after AI optimization, the image contrast ratio has been improved from 0.227 to 0.890. At the same time, the sampling rate requirement can be reduced to 25 %. Our research indicates that the efficient combination of BP heterojunction photodetectors and AI technology is expected to accelerate the development of Mid-IR photodetectors and imaging systems.
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spelling doaj-art-af5fc8d74bdc4003abb3c7cc671cde292025-08-20T03:01:57ZengDe GruyterNanophotonics2192-86142025-02-0114450351310.1515/nanoph-2024-0613Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorusWang Ziqian0Wang Huide1Wang Chen2Bao Yushuo3Zheng Weiying4Weng Xiaoliang5Zhu Yihan6Liu Yi7Zhang Yule8Tian Xilin9Sun Shuo10Cao Rui11Shi Zhe12Chen Xing13Qiu Meng14Wang Hao15Liu Jun16Chen Shuqing17Zeng Yu-Jia18Liao Wugang19Huang Zhangcheng20Li Haiou21Gao Lingfeng22Li Jianqing23Fan Dianyuan24Zhang Han25State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaCollege of Chemistry and Chemical Engineering, Ocean University of China, Qingdao266100, ChinaInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, 47890Shenzhen University, Shenzhen518060, Guangdong, ChinaCollege of Electronic and Information Engineering, 47890Shenzhen University, Shenzhen518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, 47890Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaSchool of Physics & New Energy, Xuzhou University of Technology, Xuzhou221018, ChinaSchool of Electronic Engineering, Chengdu Technological University, Chendu611730, ChinaCollege of Chemistry and Chemical Engineering, Ocean University of China, Qingdao266100, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, College of Mechatronics and Control Engineering, 47890Shenzhen University, Shenzhen518060, P.R. ChinaInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, 47890Shenzhen University, Shenzhen518060, Guangdong, ChinaInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, 47890Shenzhen University, Shenzhen518060, Guangdong, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, 47890Shenzhen University, Shenzhen518060, ChinaCollege of Electronic and Information Engineering, 47890Shenzhen University, Shenzhen518060, ChinaState Key Lab of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai200433, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin541004, ChinaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, Key Laboratory of Organosilicon Material Technology, Hangzhou Normal University, Hangzhou311121, Zhejiang, P.R. ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Cotai, MacauInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, 47890Shenzhen University, Shenzhen518060, Guangdong, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, ChinaMid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single-pixel imaging primarily depends on the performance of the photodetector and the sampling system. Photodetectors based on black phosphorus (BP) exhibit low dark current, high specific detectivity (D *), and room-temperature operability. Artificial intelligence (AI)-assisted sampling systems feature efficient and intelligent data reconstruction capabilities. In this work, we demonstrate an AI-driven black phosphorus (BP)/molybdenum disulfide (MoS2)/hexagonal boron nitride (hBN) heterojunction for Mid-IR photodetection and imaging. By optimizing the thickness of the heterojunction, the quality of the interface, and the AI algorithm, we achieved high-performance Mid-IR photodetection and imaging. Specifically, the photodetector has a responsivity of 0.25 A/W at a wavelength of 3,390 nm, an extremely high D * of 3.7 × 109 Jones, a response speed as low as 7 ms, and after AI optimization, the image contrast ratio has been improved from 0.227 to 0.890. At the same time, the sampling rate requirement can be reduced to 25 %. Our research indicates that the efficient combination of BP heterojunction photodetectors and AI technology is expected to accelerate the development of Mid-IR photodetectors and imaging systems.https://doi.org/10.1515/nanoph-2024-0613black phosphorusmid-infraredphotodetectorssingle-pixel imagingartificial intelligence
spellingShingle Wang Ziqian
Wang Huide
Wang Chen
Bao Yushuo
Zheng Weiying
Weng Xiaoliang
Zhu Yihan
Liu Yi
Zhang Yule
Tian Xilin
Sun Shuo
Cao Rui
Shi Zhe
Chen Xing
Qiu Meng
Wang Hao
Liu Jun
Chen Shuqing
Zeng Yu-Jia
Liao Wugang
Huang Zhangcheng
Li Haiou
Gao Lingfeng
Li Jianqing
Fan Dianyuan
Zhang Han
Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
Nanophotonics
black phosphorus
mid-infrared
photodetectors
single-pixel imaging
artificial intelligence
title Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
title_full Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
title_fullStr Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
title_full_unstemmed Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
title_short Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus
title_sort artificial intelligence driven mid ir photoimaging device based on van der waals heterojunctions of black phosphorus
topic black phosphorus
mid-infrared
photodetectors
single-pixel imaging
artificial intelligence
url https://doi.org/10.1515/nanoph-2024-0613
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