Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging
The reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing...
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| Format: | Article |
| Language: | English |
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Wiley
2017-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2017/8658164 |
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| author | Piaopiao He Jinlong Zhang Jianhua Zhang Luqiao Yin |
| author_facet | Piaopiao He Jinlong Zhang Jianhua Zhang Luqiao Yin |
| author_sort | Piaopiao He |
| collection | DOAJ |
| description | The reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing low-contact thermal resistance. Thermal and mechanical analyses were carried out by experiments and thermal simulation. The quantitative analysis results show that thermal resistance of die-attach layer (thermal resistance caused by die-attach material and voids in die-attach layer) plays an important role in total thermal resistance of high-power LED packaging according to the differential structure function of thermal transient characteristics. The increase of void fraction in die-attach layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K/W when the void fraction increased to 62.45%. The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30% in the die-attach layer. |
| format | Article |
| id | doaj-art-aeed5037543844329df91513aedc9d7a |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-aeed5037543844329df91513aedc9d7a2025-02-03T01:00:50ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422017-01-01201710.1155/2017/86581648658164Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes PackagingPiaopiao He0Jinlong Zhang1Jianhua Zhang2Luqiao Yin3Key Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, ChinaKey Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, ChinaThe reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing low-contact thermal resistance. Thermal and mechanical analyses were carried out by experiments and thermal simulation. The quantitative analysis results show that thermal resistance of die-attach layer (thermal resistance caused by die-attach material and voids in die-attach layer) plays an important role in total thermal resistance of high-power LED packaging according to the differential structure function of thermal transient characteristics. The increase of void fraction in die-attach layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K/W when the void fraction increased to 62.45%. The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30% in the die-attach layer.http://dx.doi.org/10.1155/2017/8658164 |
| spellingShingle | Piaopiao He Jinlong Zhang Jianhua Zhang Luqiao Yin Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging Advances in Materials Science and Engineering |
| title | Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging |
| title_full | Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging |
| title_fullStr | Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging |
| title_full_unstemmed | Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging |
| title_short | Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging |
| title_sort | effects of die attach quality on the mechanical and thermal properties of high power light emitting diodes packaging |
| url | http://dx.doi.org/10.1155/2017/8658164 |
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