Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays
Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202300371 |
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| _version_ | 1832593492072726528 |
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| author | Pengxiang Sun Xun Yang Kexue Li Zhipeng Wei Wei Fan Shaoyi Wang Weimin Zhou Chongxin Shan |
| author_facet | Pengxiang Sun Xun Yang Kexue Li Zhipeng Wei Wei Fan Shaoyi Wang Weimin Zhou Chongxin Shan |
| author_sort | Pengxiang Sun |
| collection | DOAJ |
| description | Abstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga2O3. The GaN/Ga2O3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W−1, a detection rate of 5.56 × 1011 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga2O3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays. |
| format | Article |
| id | doaj-art-ac54bdeca217479e8a01368a15613ffe |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-ac54bdeca217479e8a01368a15613ffe2025-01-20T13:56:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202300371Laser Writing of GaN/Ga2O3 Heterojunction Photodetector ArraysPengxiang Sun0Xun Yang1Kexue Li2Zhipeng Wei3Wei Fan4Shaoyi Wang5Weimin Zhou6Chongxin Shan7Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 ChinaHenan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 ChinaState Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 ChinaState Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 ChinaScience and Technology on Plasma Physics Laboratory Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 ChinaScience and Technology on Plasma Physics Laboratory Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 ChinaScience and Technology on Plasma Physics Laboratory Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 ChinaHenan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 ChinaAbstract Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga2O3. The GaN/Ga2O3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W−1, a detection rate of 5.56 × 1011 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga2O3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays.https://doi.org/10.1002/admi.202300371Ga2O3GaNheterojunctionlaser writingultraviolet detection |
| spellingShingle | Pengxiang Sun Xun Yang Kexue Li Zhipeng Wei Wei Fan Shaoyi Wang Weimin Zhou Chongxin Shan Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays Advanced Materials Interfaces Ga2O3 GaN heterojunction laser writing ultraviolet detection |
| title | Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays |
| title_full | Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays |
| title_fullStr | Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays |
| title_full_unstemmed | Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays |
| title_short | Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays |
| title_sort | laser writing of gan ga2o3 heterojunction photodetector arrays |
| topic | Ga2O3 GaN heterojunction laser writing ultraviolet detection |
| url | https://doi.org/10.1002/admi.202300371 |
| work_keys_str_mv | AT pengxiangsun laserwritingofganga2o3heterojunctionphotodetectorarrays AT xunyang laserwritingofganga2o3heterojunctionphotodetectorarrays AT kexueli laserwritingofganga2o3heterojunctionphotodetectorarrays AT zhipengwei laserwritingofganga2o3heterojunctionphotodetectorarrays AT weifan laserwritingofganga2o3heterojunctionphotodetectorarrays AT shaoyiwang laserwritingofganga2o3heterojunctionphotodetectorarrays AT weiminzhou laserwritingofganga2o3heterojunctionphotodetectorarrays AT chongxinshan laserwritingofganga2o3heterojunctionphotodetectorarrays |