A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
YAlN has emerged as a wide band gap semiconductor with high potential to compete with ScAlN in industrial applications. Theoretical predictions about YAlN’s material properties have been the main motivation for conducting experimental investigations and verify simulated results. However, several cha...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-02-01
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| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2025.1526968/full |
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