High-performance hysteresis-free perovskite transistors through anion engineering
Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hys...
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| Format: | Article |
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Nature Portfolio
2022-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-022-29434-x |
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| author | Huihui Zhu Ao Liu Kyu In Shim Haksoon Jung Taoyu Zou Youjin Reo Hyunjun Kim Jeong Woo Han Yimu Chen Hye Yong Chu Jun Hyung Lim Hyung-Jun Kim Sai Bai Yong-Young Noh |
| author_facet | Huihui Zhu Ao Liu Kyu In Shim Haksoon Jung Taoyu Zou Youjin Reo Hyunjun Kim Jeong Woo Han Yimu Chen Hye Yong Chu Jun Hyung Lim Hyung-Jun Kim Sai Bai Yong-Young Noh |
| author_sort | Huihui Zhu |
| collection | DOAJ |
| description | Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits. |
| format | Article |
| id | doaj-art-ab63e218e8334f269fa0556fee8dedb4 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2022-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-ab63e218e8334f269fa0556fee8dedb42025-01-19T12:29:29ZengNature PortfolioNature Communications2041-17232022-04-011311810.1038/s41467-022-29434-xHigh-performance hysteresis-free perovskite transistors through anion engineeringHuihui Zhu0Ao Liu1Kyu In Shim2Haksoon Jung3Taoyu Zou4Youjin Reo5Hyunjun Kim6Jeong Woo Han7Yimu Chen8Hye Yong Chu9Jun Hyung Lim10Hyung-Jun Kim11Sai Bai12Yong-Young Noh13Department of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering and School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering, Pohang University of Science and TechnologyDepartment of Chemical Engineering and School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and TechnologyMinistry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of TechnologyR&D Center, Samsung Display Inc.R&D Center, Samsung Display Inc.R&D Center, Samsung Display Inc.Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of ChinaDepartment of Chemical Engineering, Pohang University of Science and TechnologyAbstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.https://doi.org/10.1038/s41467-022-29434-x |
| spellingShingle | Huihui Zhu Ao Liu Kyu In Shim Haksoon Jung Taoyu Zou Youjin Reo Hyunjun Kim Jeong Woo Han Yimu Chen Hye Yong Chu Jun Hyung Lim Hyung-Jun Kim Sai Bai Yong-Young Noh High-performance hysteresis-free perovskite transistors through anion engineering Nature Communications |
| title | High-performance hysteresis-free perovskite transistors through anion engineering |
| title_full | High-performance hysteresis-free perovskite transistors through anion engineering |
| title_fullStr | High-performance hysteresis-free perovskite transistors through anion engineering |
| title_full_unstemmed | High-performance hysteresis-free perovskite transistors through anion engineering |
| title_short | High-performance hysteresis-free perovskite transistors through anion engineering |
| title_sort | high performance hysteresis free perovskite transistors through anion engineering |
| url | https://doi.org/10.1038/s41467-022-29434-x |
| work_keys_str_mv | AT huihuizhu highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT aoliu highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT kyuinshim highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT haksoonjung highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT taoyuzou highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT youjinreo highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT hyunjunkim highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT jeongwoohan highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT yimuchen highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT hyeyongchu highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT junhyunglim highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT hyungjunkim highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT saibai highperformancehysteresisfreeperovskitetransistorsthroughanionengineering AT yongyoungnoh highperformancehysteresisfreeperovskitetransistorsthroughanionengineering |