Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a thresh...
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2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10587190/ |
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| author | Wenyang Zhang Li Lu Chenfei Li Weijie Jiang Wenzhao Wang Xingqiang Liu Ablat Abliz Da Wan |
| author_facet | Wenyang Zhang Li Lu Chenfei Li Weijie Jiang Wenzhao Wang Xingqiang Liu Ablat Abliz Da Wan |
| author_sort | Wenyang Zhang |
| collection | DOAJ |
| description | Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula> efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays. |
| format | Article |
| id | doaj-art-ab217a3f1a584abe87876197bfa4b30b |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ab217a3f1a584abe87876197bfa4b30b2025-01-28T00:00:41ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011250250710.1109/JEDS.2024.342454510587190Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film TransistorsWenyang Zhang0https://orcid.org/0009-0000-1532-1788Li Lu1Chenfei Li2Weijie Jiang3Wenzhao Wang4https://orcid.org/0000-0003-0584-9284Xingqiang Liu5https://orcid.org/0000-0002-3598-8755Ablat Abliz6Da Wan7https://orcid.org/0000-0001-6142-1755School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaSchool of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaSchool of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaSchool of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaSchool of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaState Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, ChinaSchool of Physics and Technology, Xinjiang University, Ürümqi, ChinaSchool of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, ChinaHerein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula> efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.https://ieeexplore.ieee.org/document/10587190/Amorphous indium gallium tin oxide (a-IGTO)thin-film transistors (TFTs)N dopingbias stress stabilitylow frequency noise (LFN) |
| spellingShingle | Wenyang Zhang Li Lu Chenfei Li Weijie Jiang Wenzhao Wang Xingqiang Liu Ablat Abliz Da Wan Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors IEEE Journal of the Electron Devices Society Amorphous indium gallium tin oxide (a-IGTO) thin-film transistors (TFTs) N doping bias stress stability low frequency noise (LFN) |
| title | Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors |
| title_full | Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors |
| title_fullStr | Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors |
| title_full_unstemmed | Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors |
| title_short | Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors |
| title_sort | study of highly stable nitrogen doped a ingasno thin film transistors |
| topic | Amorphous indium gallium tin oxide (a-IGTO) thin-film transistors (TFTs) N doping bias stress stability low frequency noise (LFN) |
| url | https://ieeexplore.ieee.org/document/10587190/ |
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