High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/785415 |
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| _version_ | 1832545391594176512 |
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| author | Hyun Jung Kim Yeonjoon Park Hyung Bin Bae Sang H. Choi |
| author_facet | Hyun Jung Kim Yeonjoon Park Hyung Bin Bae Sang H. Choi |
| author_sort | Hyun Jung Kim |
| collection | DOAJ |
| description | High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016 per cm3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on c-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on c-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3 doping concentration. |
| format | Article |
| id | doaj-art-aacea5c1a40841a1b5222c72ef37827c |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-aacea5c1a40841a1b5222c72ef37827c2025-02-03T07:26:01ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/785415785415High-Electron-Mobility SiGe on Sapphire Substrate for Fast ChipsetsHyun Jung Kim0Yeonjoon Park1Hyung Bin Bae2Sang H. Choi3National Institute of Aerospace (NIA), 100 Exploration Way, Hampton, VA 23666, USANational Institute of Aerospace (NIA), 100 Exploration Way, Hampton, VA 23666, USAKAIST Research Analysis Center (KARA), Korea Advanced Institute of Science and Technology (KAIST), Science Road, Yuseong-Gu, Daejeon 305-701, Republic of KoreaNASA Langley Research Center, Hampton, VA 23681-2199, USAHigh-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016 per cm3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on c-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on c-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3 doping concentration.http://dx.doi.org/10.1155/2015/785415 |
| spellingShingle | Hyun Jung Kim Yeonjoon Park Hyung Bin Bae Sang H. Choi High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets Advances in Condensed Matter Physics |
| title | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets |
| title_full | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets |
| title_fullStr | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets |
| title_full_unstemmed | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets |
| title_short | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets |
| title_sort | high electron mobility sige on sapphire substrate for fast chipsets |
| url | http://dx.doi.org/10.1155/2015/785415 |
| work_keys_str_mv | AT hyunjungkim highelectronmobilitysigeonsapphiresubstrateforfastchipsets AT yeonjoonpark highelectronmobilitysigeonsapphiresubstrateforfastchipsets AT hyungbinbae highelectronmobilitysigeonsapphiresubstrateforfastchipsets AT sanghchoi highelectronmobilitysigeonsapphiresubstrateforfastchipsets |