Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping c...
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MDPI AG
2025-01-01
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| author | Mohammed Tanvir Quddus Alvaro D. Latorre-Rey Zeinab Ramezani Mihir Mudholkar |
| author_facet | Mohammed Tanvir Quddus Alvaro D. Latorre-Rey Zeinab Ramezani Mihir Mudholkar |
| author_sort | Mohammed Tanvir Quddus |
| collection | DOAJ |
| description | Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations. This paper introduces a new physics-based analytical model to elucidate the behavior of electric field and potential in the mesa region of a TMBS rectifier in reverse bias. Our model leverages the concept of shared charge between the Schottky and MOS junctions, capturing how electric field distribution is altered in response to trench geometry and bias conditions. This shared charge approach not only simplifies the analysis of electric field distribution but also reveals key design parameters, such as trench depth, oxide thickness, and doping concentration, that influence device performance. This model employs the concept of shared charge between the vertical Schottky and MOS junction. Additionally, it provides a detailed view of the electric field suppression mechanism in the TMBS device, highlighting the significant effects of the inversion charge on the MOS interface. By comparing our analytical results with TCAD simulations, we demonstrate strong agreement, underscoring the model’s accuracy and its potential to serve as a more accessible alternative to resource-intensive simulations. This work contributes to a valuable tool for TMBS device design, offering insights into electric field management that support high-efficiency, high-voltage applications, including power supplies, automotive electronics, and renewable energy systems. |
| format | Article |
| id | doaj-art-a9b866cda05a4535aab3e351309ae6eb |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-a9b866cda05a4535aab3e351309ae6eb2025-01-24T13:42:07ZengMDPI AGMicromachines2072-666X2025-01-011619010.3390/mi16010090Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge SharingMohammed Tanvir Quddus0Alvaro D. Latorre-Rey1Zeinab Ramezani2Mihir Mudholkar3Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USAPower Solutions Group, Onsemi, Scottsdale, AZ 85250, USAPower Solutions Group, Onsemi, Scottsdale, AZ 85250, USAPower Solutions Group, Onsemi, Scottsdale, AZ 85250, USATrench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations. This paper introduces a new physics-based analytical model to elucidate the behavior of electric field and potential in the mesa region of a TMBS rectifier in reverse bias. Our model leverages the concept of shared charge between the Schottky and MOS junctions, capturing how electric field distribution is altered in response to trench geometry and bias conditions. This shared charge approach not only simplifies the analysis of electric field distribution but also reveals key design parameters, such as trench depth, oxide thickness, and doping concentration, that influence device performance. This model employs the concept of shared charge between the vertical Schottky and MOS junction. Additionally, it provides a detailed view of the electric field suppression mechanism in the TMBS device, highlighting the significant effects of the inversion charge on the MOS interface. By comparing our analytical results with TCAD simulations, we demonstrate strong agreement, underscoring the model’s accuracy and its potential to serve as a more accessible alternative to resource-intensive simulations. This work contributes to a valuable tool for TMBS device design, offering insights into electric field management that support high-efficiency, high-voltage applications, including power supplies, automotive electronics, and renewable energy systems.https://www.mdpi.com/2072-666X/16/1/90charge sharingtrench MOSSchottky diodesanalytical model |
| spellingShingle | Mohammed Tanvir Quddus Alvaro D. Latorre-Rey Zeinab Ramezani Mihir Mudholkar Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing Micromachines charge sharing trench MOS Schottky diodes analytical model |
| title | Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing |
| title_full | Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing |
| title_fullStr | Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing |
| title_full_unstemmed | Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing |
| title_short | Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing |
| title_sort | trench mos schottky diodes a physics based analytical model approach to charge sharing |
| topic | charge sharing trench MOS Schottky diodes analytical model |
| url | https://www.mdpi.com/2072-666X/16/1/90 |
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