Low-Power CMOS Integrated Hall Switch Sensor
This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the of...
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| Format: | Article |
| Language: | English |
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Wiley
2017-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2017/5375619 |
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| _version_ | 1832548073969025024 |
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| author | Rongshan Wei Shizhong Guo Shanzhi Yang |
| author_facet | Rongshan Wei Shizhong Guo Shanzhi Yang |
| author_sort | Rongshan Wei |
| collection | DOAJ |
| description | This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 µA. |
| format | Article |
| id | doaj-art-a8c1cc09bdb34ece8d2b61b849320b77 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-a8c1cc09bdb34ece8d2b61b849320b772025-02-03T06:42:16ZengWileyActive and Passive Electronic Components0882-75161563-50312017-01-01201710.1155/2017/53756195375619Low-Power CMOS Integrated Hall Switch SensorRongshan Wei0Shizhong Guo1Shanzhi Yang2College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, ChinaCollege of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, ChinaCollege of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian, ChinaThis paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 µA.http://dx.doi.org/10.1155/2017/5375619 |
| spellingShingle | Rongshan Wei Shizhong Guo Shanzhi Yang Low-Power CMOS Integrated Hall Switch Sensor Active and Passive Electronic Components |
| title | Low-Power CMOS Integrated Hall Switch Sensor |
| title_full | Low-Power CMOS Integrated Hall Switch Sensor |
| title_fullStr | Low-Power CMOS Integrated Hall Switch Sensor |
| title_full_unstemmed | Low-Power CMOS Integrated Hall Switch Sensor |
| title_short | Low-Power CMOS Integrated Hall Switch Sensor |
| title_sort | low power cmos integrated hall switch sensor |
| url | http://dx.doi.org/10.1155/2017/5375619 |
| work_keys_str_mv | AT rongshanwei lowpowercmosintegratedhallswitchsensor AT shizhongguo lowpowercmosintegratedhallswitchsensor AT shanzhiyang lowpowercmosintegratedhallswitchsensor |