Suppression of ferromagnetic correlations in hole-doped SrCo2As2

We report the growth of high-quality single crystals of hole-doped composition ${\mathrm{Sr}_{0.95}\mathrm{K}_{0.05}\mathrm{Co}_2\mathrm{As}_2}$ and present an investigation of its structural, electronic, thermal, and magnetic properties. Our results show that hole doping leads to a substantial supp...

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Bibliographic Details
Main Authors: M Morena, A Van Der Spuy, Y Liu, R Warmbier, Abhishek Pandey
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:JPhys Materials
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Online Access:https://doi.org/10.1088/2515-7639/adb801
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Summary:We report the growth of high-quality single crystals of hole-doped composition ${\mathrm{Sr}_{0.95}\mathrm{K}_{0.05}\mathrm{Co}_2\mathrm{As}_2}$ and present an investigation of its structural, electronic, thermal, and magnetic properties. Our results show that hole doping leads to a substantial suppression of ferromagnetic (FM) correlations present in ${\mathrm{SrCo}_2\mathrm{As}_2}$ leading to nearly isotropic magnetic susceptibilities $\chi_{ab,c}(T)$ of ${\mathrm{Sr}_{0.95}\mathrm{K}_{0.05}\mathrm{Co}_2\mathrm{As}_2}$ . The presence of FM fluctuations is considered one of the detrimental reasons why ${\mathrm{SrCo}_2\mathrm{As}_2}$ does not achieve a superconducting ground state despite having a precursor for it in the form of stripe-like antiferromagnetic fluctuations. The suppression of FM fluctuations leads to qualitative similarities between the properties of hole-doped ${\mathrm{SrCo}_2\mathrm{As}_2}$ and the end member of superconducting 122 iron-arsenide family KFe _2 As _2 . Our results also infer the presence of strongly correlated electronic states in ${\mathrm{Sr}_{0.95}\mathrm{K}_{0.05}\mathrm{Co}_2\mathrm{As}_2}$ . Further, they show that the electronic structure of ${\mathrm{SrCo}_2\mathrm{As}_2}$ as well as this hole-doped composition is exceptionally unstable in the vicinity of Fermi level $E_{\mathrm{F}}$ for small alterations in the structural parameters and sensitively depends upon the details of simulation.
ISSN:2515-7639