Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells
We have studied the p-type hydrogenated silicon oxide (SiOx:H) films prepared in the amorphous-to-microcrystalline transition region as a window layer in a-Si:H/a-Si1-yGey:H multijunction solar cells. By increasing the H2-to-SiH4 flow ratio (RH2) from 10 to 167, the SiOx:H(p) films remained amorphou...
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/3095758 |
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| author | Pei-Ling Chen Po-Wei Chen Chuang-Chuang Tsai |
| author_facet | Pei-Ling Chen Po-Wei Chen Chuang-Chuang Tsai |
| author_sort | Pei-Ling Chen |
| collection | DOAJ |
| description | We have studied the p-type hydrogenated silicon oxide (SiOx:H) films prepared in the amorphous-to-microcrystalline transition region as a window layer in a-Si:H/a-Si1-yGey:H multijunction solar cells. By increasing the H2-to-SiH4 flow ratio (RH2) from 10 to 167, the SiOx:H(p) films remained amorphous and exhibited an increased hydrogen content from 10.2% to 12.2%. Compared to the amorphous SiOx:H(p) film prepared at low RH2, the SiOx:H(p) film deposited at RH2 of 167 exhibited a higher bandgap of 2.04 eV and a higher conductivity of 1.15 × 10−5 S/cm. With the employment of SiOx:H(p) films prepared by increasing RH2 from 10 to 167 in a-Si:H single-junction cell, the FF improved from 65% to 70% and the efficiency increased from 7.4% to 8.7%, owing to the enhanced optoelectrical properties of SiOx:H(p) and the improved p/i interface. However, the cell that employed SiOx:H(p) film with RH2 over 175 degraded the p/i interface and degraded the cell performance, which were arising from the onset of crystallization in the window layer. Compared to the cell using standard a-SiCx:H(p), the a-Si:H/a-Si1-yGey:H tandem cells employing SiOx:H(p) deposited with RH2 of 167 showed an improved efficiency from 9.3% to 10.3%, with VOC of 1.60 V, JSC of 9.3 mA/cm2, and FF of 68.9%. |
| format | Article |
| id | doaj-art-a74e13181fb046ceb4ad47ad7c90eadc |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-a74e13181fb046ceb4ad47ad7c90eadc2025-02-03T01:24:07ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/30957583095758Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar CellsPei-Ling Chen0Po-Wei Chen1Chuang-Chuang Tsai2Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, TaiwanWe have studied the p-type hydrogenated silicon oxide (SiOx:H) films prepared in the amorphous-to-microcrystalline transition region as a window layer in a-Si:H/a-Si1-yGey:H multijunction solar cells. By increasing the H2-to-SiH4 flow ratio (RH2) from 10 to 167, the SiOx:H(p) films remained amorphous and exhibited an increased hydrogen content from 10.2% to 12.2%. Compared to the amorphous SiOx:H(p) film prepared at low RH2, the SiOx:H(p) film deposited at RH2 of 167 exhibited a higher bandgap of 2.04 eV and a higher conductivity of 1.15 × 10−5 S/cm. With the employment of SiOx:H(p) films prepared by increasing RH2 from 10 to 167 in a-Si:H single-junction cell, the FF improved from 65% to 70% and the efficiency increased from 7.4% to 8.7%, owing to the enhanced optoelectrical properties of SiOx:H(p) and the improved p/i interface. However, the cell that employed SiOx:H(p) film with RH2 over 175 degraded the p/i interface and degraded the cell performance, which were arising from the onset of crystallization in the window layer. Compared to the cell using standard a-SiCx:H(p), the a-Si:H/a-Si1-yGey:H tandem cells employing SiOx:H(p) deposited with RH2 of 167 showed an improved efficiency from 9.3% to 10.3%, with VOC of 1.60 V, JSC of 9.3 mA/cm2, and FF of 68.9%.http://dx.doi.org/10.1155/2016/3095758 |
| spellingShingle | Pei-Ling Chen Po-Wei Chen Chuang-Chuang Tsai Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells International Journal of Photoenergy |
| title | Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells |
| title_full | Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells |
| title_fullStr | Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells |
| title_full_unstemmed | Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells |
| title_short | Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGey:H Multijunction Solar Cells |
| title_sort | study of transition region of p type siox h as window layer in a si h a si1 ygey h multijunction solar cells |
| url | http://dx.doi.org/10.1155/2016/3095758 |
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