Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects

In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combi...

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Main Authors: M. I. Loupis, J. N. Avaritsiotis, G. D. Tziallas
Format: Article
Language:English
Published: Wiley 1994-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1994/60298
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author M. I. Loupis
J. N. Avaritsiotis
G. D. Tziallas
author_facet M. I. Loupis
J. N. Avaritsiotis
G. D. Tziallas
author_sort M. I. Loupis
collection DOAJ
description In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.
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spelling doaj-art-a70b0fbd1dec408c988798ef6a5d7e972025-02-03T06:01:29ZengWileyActive and Passive Electronic Components0882-75161563-50311994-01-0116211912610.1155/1994/60298Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film InterconnectsM. I. Loupis0J. N. Avaritsiotis1G. D. Tziallas2National Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceNational Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceNational Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceIn electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.http://dx.doi.org/10.1155/1994/60298
spellingShingle M. I. Loupis
J. N. Avaritsiotis
G. D. Tziallas
Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
Active and Passive Electronic Components
title Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
title_full Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
title_fullStr Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
title_full_unstemmed Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
title_short Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
title_sort comparative study of statistical distributions in electromigration induced failures of al cu thin film interconnects
url http://dx.doi.org/10.1155/1994/60298
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AT gdtziallas comparativestudyofstatisticaldistributionsinelectromigrationinducedfailuresofalcuthinfilminterconnects