Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment
A vertical GaN p–n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 10 ^17 –3 × 10 ^18 cm ^−3 by annealing with an AlN capping layer...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada71a |
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