Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching
In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to cla...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2018/6563730 |
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| author | G. Jia J. Plentz A. Gawlik A. S. Azar G. Stokkan M. Syvertsen P. A. Carvalho J. Dellith A. Dellith G. Andrä A. Ulyashin |
| author_facet | G. Jia J. Plentz A. Gawlik A. S. Azar G. Stokkan M. Syvertsen P. A. Carvalho J. Dellith A. Dellith G. Andrä A. Ulyashin |
| author_sort | G. Jia |
| collection | DOAJ |
| description | In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses ~180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments. |
| format | Article |
| id | doaj-art-a56ec3d9ab3540b589c111370bd68d92 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-a56ec3d9ab3540b589c111370bd68d922025-02-03T01:13:08ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2018-01-01201810.1155/2018/65637306563730Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire EtchingG. Jia0J. Plentz1A. Gawlik2A. S. Azar3G. Stokkan4M. Syvertsen5P. A. Carvalho6J. Dellith7A. Dellith8G. Andrä9A. Ulyashin10Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanySINTEF, Oslo, NorwaySINTEF, Trondheim, NorwaySINTEF, Trondheim, NorwaySINTEF, Oslo, NorwayLeibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, GermanySINTEF, Oslo, NorwayIn this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses ~180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments.http://dx.doi.org/10.1155/2018/6563730 |
| spellingShingle | G. Jia J. Plentz A. Gawlik A. S. Azar G. Stokkan M. Syvertsen P. A. Carvalho J. Dellith A. Dellith G. Andrä A. Ulyashin Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching International Journal of Photoenergy |
| title | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching |
| title_full | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching |
| title_fullStr | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching |
| title_full_unstemmed | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching |
| title_short | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching |
| title_sort | silicon powder based wafers for low cost photovoltaics laser treatments and nanowire etching |
| url | http://dx.doi.org/10.1155/2018/6563730 |
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