On estimation of maximal value of full diffusion time of infused and implanted dopants
In this paper, we estimate the maximal annealing time of dopant and/or radiation defects during the manufacturing of elements of integrated circuits by dopant diffusion and ion implantation. We introduce an analytical approach to estimate the maximal continuance of the diffusion process. We analyzed...
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| Format: | Article |
| Language: | English |
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World Scientific Publishing
2024-12-01
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| Series: | International Journal of Mathematics for Industry |
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| Online Access: | https://www.worldscientific.com/doi/10.1142/S2661335224500175 |
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| author | E. L. Pankratov |
| author_facet | E. L. Pankratov |
| author_sort | E. L. Pankratov |
| collection | DOAJ |
| description | In this paper, we estimate the maximal annealing time of dopant and/or radiation defects during the manufacturing of elements of integrated circuits by dopant diffusion and ion implantation. We introduce an analytical approach to estimate the maximal continuance of the diffusion process. We analyzed the influence of parameters of considered technological processes on the value of their maximal continuance of diffusion process. |
| format | Article |
| id | doaj-art-a4cd10f9d1a3405e8358d4d06ed2fb28 |
| institution | Kabale University |
| issn | 2661-3352 2661-3344 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | World Scientific Publishing |
| record_format | Article |
| series | International Journal of Mathematics for Industry |
| spelling | doaj-art-a4cd10f9d1a3405e8358d4d06ed2fb282025-01-31T06:15:28ZengWorld Scientific PublishingInternational Journal of Mathematics for Industry2661-33522661-33442024-12-01160110.1142/S2661335224500175On estimation of maximal value of full diffusion time of infused and implanted dopantsE. L. Pankratov0Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod 603950, RussiaIn this paper, we estimate the maximal annealing time of dopant and/or radiation defects during the manufacturing of elements of integrated circuits by dopant diffusion and ion implantation. We introduce an analytical approach to estimate the maximal continuance of the diffusion process. We analyzed the influence of parameters of considered technological processes on the value of their maximal continuance of diffusion process.https://www.worldscientific.com/doi/10.1142/S2661335224500175Manufacturing of integrated circuit elementsdopant diffusionion implantationmaximal continuance of continuance of diffusion processanalytical approach for prognosis |
| spellingShingle | E. L. Pankratov On estimation of maximal value of full diffusion time of infused and implanted dopants International Journal of Mathematics for Industry Manufacturing of integrated circuit elements dopant diffusion ion implantation maximal continuance of continuance of diffusion process analytical approach for prognosis |
| title | On estimation of maximal value of full diffusion time of infused and implanted dopants |
| title_full | On estimation of maximal value of full diffusion time of infused and implanted dopants |
| title_fullStr | On estimation of maximal value of full diffusion time of infused and implanted dopants |
| title_full_unstemmed | On estimation of maximal value of full diffusion time of infused and implanted dopants |
| title_short | On estimation of maximal value of full diffusion time of infused and implanted dopants |
| title_sort | on estimation of maximal value of full diffusion time of infused and implanted dopants |
| topic | Manufacturing of integrated circuit elements dopant diffusion ion implantation maximal continuance of continuance of diffusion process analytical approach for prognosis |
| url | https://www.worldscientific.com/doi/10.1142/S2661335224500175 |
| work_keys_str_mv | AT elpankratov onestimationofmaximalvalueoffulldiffusiontimeofinfusedandimplanteddopants |