On estimation of maximal value of full diffusion time of infused and implanted dopants

In this paper, we estimate the maximal annealing time of dopant and/or radiation defects during the manufacturing of elements of integrated circuits by dopant diffusion and ion implantation. We introduce an analytical approach to estimate the maximal continuance of the diffusion process. We analyzed...

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Bibliographic Details
Main Author: E. L. Pankratov
Format: Article
Language:English
Published: World Scientific Publishing 2024-12-01
Series:International Journal of Mathematics for Industry
Subjects:
Online Access:https://www.worldscientific.com/doi/10.1142/S2661335224500175
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Summary:In this paper, we estimate the maximal annealing time of dopant and/or radiation defects during the manufacturing of elements of integrated circuits by dopant diffusion and ion implantation. We introduce an analytical approach to estimate the maximal continuance of the diffusion process. We analyzed the influence of parameters of considered technological processes on the value of their maximal continuance of diffusion process.
ISSN:2661-3352
2661-3344