A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure
Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utili...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/2/970 |
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